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Please use this identifier to cite or link to this item: https://doi.org/10.1109/FLEPS.2019.8792259
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dc.titleImpact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM
dc.contributor.authorSamanta, Subhranu
dc.contributor.authorZhang, Panpan
dc.contributor.authorHan, Kaizhen
dc.contributor.authorGong, Xiao
dc.contributor.authorChakraborty, Sandipan
dc.contributor.authorLi, Yida
dc.contributor.authorFong, Xuanyao
dc.date.accessioned2023-11-08T04:00:45Z
dc.date.available2023-11-08T04:00:45Z
dc.date.issued2019
dc.identifier.citationSamanta, Subhranu, Zhang, Panpan, Han, Kaizhen, Gong, Xiao, Chakraborty, Sandipan, Li, Yida, Fong, Xuanyao (2019). Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO<sub>x</sub>-Based Flexible Cross-Point RRAM. 1st IEEE International Conference on Flexible and Printable Sensors and Systems (IEEE FLEPS). ScholarBank@NUS Repository. https://doi.org/10.1109/FLEPS.2019.8792259
dc.identifier.isbn9781538693049
dc.identifier.urihttps://scholarbank.nus.edu.sg/handle/10635/245806
dc.description.abstractThe impact of Ti interfacial layer on resistive switching characteristics in 5×5 μm2 Ni/Ti/SiOx /Ni flexible cross-point resistive random access memory (RRAM) structure for the first time. Devices with Ti buffer layer exhibits bipolar resistive switching (BRS) with large memory window (HRS/LRS) of > 103 at 500 nA current compliance (CC). Thin 4-nm Ti interfacial layer regulates the migration of oxygen ions (O-2) and controls BRS process. Highly non-linear (non-linearity of > 22) switching (rectifying ratio i.e, RR of >4×103) is obtained from reference sample without (W/O) Ti buffer layer.
dc.publisherIEEE
dc.sourceElements
dc.subjectScience & Technology
dc.subjectTechnology
dc.subjectEngineering, Manufacturing
dc.subjectEngineering, Electrical & Electronic
dc.subjectInstruments & Instrumentation
dc.subjectMaterials Science, Multidisciplinary
dc.subjectEngineering
dc.subjectMaterials Science
dc.subjectFlexible
dc.subjectRRAM
dc.subjectSiOx
dc.subjectLow CC
dc.typeConference Paper
dc.date.updated2023-11-05T09:28:41Z
dc.contributor.departmentELECTRICAL AND COMPUTER ENGINEERING
dc.description.doi10.1109/FLEPS.2019.8792259
dc.description.sourcetitle1st IEEE International Conference on Flexible and Printable Sensors and Systems (IEEE FLEPS)
dc.published.statePublished
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