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https://doi.org/10.1109/SISPAD.2011.6035047
Title: | KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells | Authors: | Fong, X Gupta, SK Mojumder, NN Choday, SH Augustine, C Roy, K |
Issue Date: | 1-Nov-2011 | Publisher: | IEEE | Citation: | Fong, X, Gupta, SK, Mojumder, NN, Choday, SH, Augustine, C, Roy, K (2011-11-01). KNACK: A hybrid spin-charge mixed-mode simulator for evaluating different genres of spin-transfer torque MRAM bit-cells. 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) : 51-54. ScholarBank@NUS Repository. https://doi.org/10.1109/SISPAD.2011.6035047 | Abstract: | The storage device in spin-transfer torque MRAM (STT-MRAM) is the magnetic tunneling junction (MTJ) and several models for the MTJ have been proposed. However, a simulation framework that captures device physics at the atomistic level when simulating STT-MRAM at the bit-cell level is lacking. We propose a simulation framework (KNACK) which models the MTJ at the atomistic level using the Non-Equilibrium Green's Function (NEGF) formalism and uses the NEGF model in conjunction with our STT-MRAM bit-cell circuit model for circuit-level simulations. Our simulation framework accepts I-V and C-V characteristics of the access device input either as lookup tables or as compact models. We show that with appropriate device and bit-cell parameters, our simulation framework has the ability to capture MTJ physics and simulate different genres of STT-MRAM bit-cells with results in agreement with experiments. © 2011 IEEE. | Source Title: | 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) | URI: | https://scholarbank.nus.edu.sg/handle/10635/156214 | ISBN: | 9781612844169 | DOI: | 10.1109/SISPAD.2011.6035047 |
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