Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2013.6724739
Title: Exploring the Design of Ultra-Low Energy Global Interconnects Based on Spin-Torque Switches
Authors: Sharad, Mrigank
Fong, Xuanyao 
Roy, Kaushik 
Keywords: Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Physics, Applied
Engineering
Physics
Issue Date: 1-Jan-2013
Publisher: IEEE
Citation: Sharad, Mrigank, Fong, Xuanyao, Roy, Kaushik (2013-01-01). Exploring the Design of Ultra-Low Energy Global Interconnects Based on Spin-Torque Switches. IEEE International Electron Devices Meeting (IEDM). ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2013.6724739
Abstract: Emerging spin-torque phenomena, like Spin Hall Effect (SHE), may lead to high-speed, low-voltage current-mode switches based on nano-scale magnets. In this work we propose and analyze the application of such spin-torque switches in the design of energy-efficient and highperformance current-mode on-chip global-interconnects. Simulations show the possibility of achieving up to two order of magnitude higher energy-efficiency as compared to conventional CMOS techniques, for optimal spin-device parameters. A case study for on-chip MRAM cache simulation shows ∼90% reduction in energy for on-chip memory access, using the proposed interconnect design. © 2013 IEEE.
Source Title: IEEE International Electron Devices Meeting (IEDM)
URI: https://scholarbank.nus.edu.sg/handle/10635/156208
ISBN: 9781479923076
ISSN: 01631918
DOI: 10.1109/IEDM.2013.6724739
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