1. ScholarBank@NUS

Ling Chung Ho

rp09495

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Ling Chung Ho
(not current staff)
Variants
Ling, C.-H.
Ling, C.
Ling, C.H.
Ling, Chung Ho
Ling, Chung-Ho
 
Main Affiliation
 
Faculty
 
Email
eleling@nus.edu.sg
 

Publications

Refined By:
Type:  Article
Date Issued:  [2000 TO 2009]

Results 1-20 of 21 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
1Dec-2002A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessmentLiao, H.; Ang, D.S. ; Ling, C.H. 
22000A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFETCheng, Z.Y. ; Ling, C.H. 
3Nov-2008A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFETZhang, G.; Yoo, W.J.; Ling, C.H. 
4Dec-2000Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide filmsAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
52000Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiationLing, C.H. ; Ang, C.H.; Ang, D.S. 
6Oct-2000Comparative study of radiation- and stress-induced leakage currents in thin gate oxidesAng, C.H.; Ling, C.H. ; Cheng, Z.Y. ; Kim, S.J. ; Cho, B.J. 
71-Jul-2000Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradationCho, B.J. ; Kim, S.J. ; Ling, C.H. ; Joo, M.-S.; Yeo, I.-S.
82000Does short wavelength lithography process degrade the integrity of thin gate oxide?Kim, S.J. ; Cho, B.J. ; Chong, P.F.; Chor, E.F. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
9Dec-2004Evidence for a composite interface state generation mode in the CHE-stressed deep-submicrometer n-MOSFETAng, D.S.; Liao, H.; Phua, T.W.H.; Ling, C.H. 
10Dec-2005Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFETAng, D.S.; Wang, S.; Ling, C.H. 
11Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
12Feb-2001Gate-channel capacitance characteristics in the fully-depleted SOI MOSFETCheng, Z.-Y. ; Ling, C.H. 
13Nov-2001Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear regionAng, D.S. ; Lun, Z. ; Ling, C.H. 
14Dec-2003Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and ModelingAng, D.S.; Lun, Z. ; Ling, C.H. 
15Jun-2008Hot-electron capture for CHEI programming in SONOS-type flash memory using high- κ trapping layerZhang, G.; Yoo, W.J.; Ling, C.-H. 
161-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
171-Nov-2000Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxidesAng, C.-H.; Ling, C.-H. ; Cho, B.-J. ; Kim, S.-J. ; Cheng, Z.-Y. 
182000Reduction of radiation-induced leakage currents in thin oxides by application of a low post-irradiation gate biasAng, Chew-Hoe; Ling, Chung-Ho ; Cheng, Zhi-Yuan ; Kim, Sun-Jung ; Cho, Byung-Jin 
19Apr-2001Reliability of thin gate oxides irradiated under X-ray lithography conditionsCho, B.J. ; Kim, S.J. ; Ang, C.H.; Ling, C.H. ; Joo, M.S.; Yeo, I.S.
20Aug-2008Self-heating-induced spatial spread of interface state generation by hot-electron effect: Role of the high-energy tail electronAng, D.S.; Phua, T.W.H.; Ling, C.H.