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|Title:||A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET||Authors:||Zhang, G.
Metal-oxide-semiconductor field-effect transistor
|Issue Date:||Nov-2008||Citation:||Zhang, G., Yoo, W.J., Ling, C.H. (2008-11). A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET. Solid-State Electronics 52 (11) : 1773-1777. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2008.07.007||Abstract:||A time-dependent technique is developed for carrier recombination-generation (R-G) lifetimes measurement in the silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET). One gate is kept in strong accumulation, and the other gate is kept in strong inversion. A ramp voltage is applied to the accumulated gate, and the drain current transients are monitored for both carrier R-G lifetimes extraction. The time-dependent technique shows an extensive applicability, and its credibility is proved by simulation. © 2008 Elsevier Ltd. All rights reserved.||Source Title:||Solid-State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/54834||ISSN:||00381101||DOI:||10.1016/j.sse.2008.07.007|
|Appears in Collections:||Staff Publications|
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