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Lee Tek Po,Rinus

rp07050

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Full Name
Lee Tek Po,Rinus
(not current staff)
Variants
Lee, R.T.P.
Lee, R.T.-P.
 
Main Affiliation
 
Faculty
 
Email
eleltpr@nus.edu.sg
 

Publications

Results 41-57 of 57 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
41Dec-2009Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETsSinha, M.; Lee, R.T.P. ; Chor, E.F. ; Yeo, Y.-C. 
422008Selenium Co-implantation and segregation as a new contact technology for nanoscale SOI N-FETs featuring NiSi:C formed on Silicon-carbon (Si:C) source/drain stressorsWong, H.-S.; Liu, F.-Y.; Ang, K.-W.; Koh, S.-M.; Koh, A.T.-Y.; Liow, T.-Y.; Lee, R.T.-P. ; Lim, A.E.-J.; Fang, W.-W.; Zhu, M. ; Chan, L.; Balasubramaniam, N.; Samudra, G. ; Yeo, Y.-C. 
432009Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakageKoh, S.-M.; Zhou, W.J.; Lee, R.T.P. ; Sinha, M.; Ng, C.-M.; Zhao, Z.; Maynard, H.; Variam, N.; Erokhin, Y.; Samudra, G. ; Yeo, Y.-C. 
442009Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implantSinha, M.; Lee, R.T.P. ; Devi, S.N.; Lo, G.-Q.; Eng, F.C. ; Yeo, Y.-C. 
45Jan-2008Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
462008Strain enhancement in spacerless N-channel FinFETs with silicon-carbon source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
472008Strained FinFETs with in-situ doped Si1-yCy source and drain stressors: Performance boost with lateral stressor encroachment and high substitutional carbon contentLiow, T.-Y.; Tan, K.-M.; Weeks, D.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
482008Strained n-channel FinFETs featuring in situ doped silicon-carbon (Si1-yCy) source and drain stressors with high carbon contentLiow, T.-Y.; Tan, K.-M.; Weeks, D.; Lee, R.T.P. ; Zhu, M. ; Hoe, K.-M.; Tung, C.-H.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
492006Strained N-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancementLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Du, A.; Tung, C.-H.; Samudra, G.S. ; Yoo, W.-J. ; Balasubramanian, N.; Yeo, Y.-C. 
50Oct-2007Strained p-channel FinFETs with extended Π-shaped silicon-germanium source and drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Hoe, K.M.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yeo, Y.-C. 
512008Strained silicon nanowire transistors with germanium source and drain stressorsLiow, T.-Y.; Tan, K.-M.; Lee, R.T.P. ; Zhu, M. ; Tan, B.L.-H.; Balasubramanian, N.; Yeo, Y.-C. 
122007Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETsLee, R.T.P. ; Tan, K.-M.; Liow, T.-Y.; Lim, A.E.-J.; Lo, G.-Q.; Samudra', G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
1324-Apr-2007Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressorsTan, K.-M.; Liow, T.-Y.; Lee, R.T.P. ; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Samudra, G.S. ; Yoo, W.-J. ; Yeo, Y.-C. 
142009Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistanceLee, R.T.-P. ; Lim, A.E.-J.; Tan, K.-M.; Liow, T.-Y.; Chi, D.Z.; Yeo, Y.-C. 
152009The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressorsLee, R.T.P. ; Koh, A.T.-Y.; Tan, K.-M.; Liow, T.-Y.; Chi, D.Z.; Yeo, Y.-C. 
162009Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistorsTan, K.-M.; Yang, M.; Liow, T.-Y.; Lee, R.T.P. ; Yeo, Y.-C. 
17Jun-2007Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFETLim, A.E.-J.; Lee, R.T.P. ; Wang, X.P.; Hwang, W.S.; Tung, C.H.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C.