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|Title:||Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET||Authors:||Lim, A.E.-J.
Nickel fully silicided (Ni-FUSI)
Work function modulation
|Issue Date:||Jun-2007||Citation:||Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.H., Samudra, G.S., Kwong, D.-L., Yeo, Y.-C. (2007-06). Yttrium- and terbium-based interlayer on SiO2 and HfO2 gate dielectrics for work function modulation of nickel fully silicided gate in nMOSFET. IEEE Electron Device Letters 28 (6) : 482-485. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.896892||Abstract:||Novel yttrium- and terbium-based interlayers YIL and ILIL respectively) on SiO2 and HfO2 gate dielectrics were employed for NMOS work function Φm modulation of undoped nickel fully silicided (Ni-FUSI) gate. Bandedge Ni-FUSI gate Φm of ∼ 4.11 and ∼ 4.07 eV was obtained by insertion of ultrathin (∼ 1 nm) YIL and TbIL, respectively, on the SiO2 gate dielectric in a gate-first process (with 1000 °C anneal). NiSi Φm on SiO2 could also be tuned between the Si midgap and the conduction bandedge EC by varying the interlayer thickness. The achievement of NiSi Φm around 4.28 eV on the HfO2 gate dielectric using interlayer insertion makes this an attractive Φm modulation technique for Ni-FUSI gates on SiO2 and high-κ dielectrics. © 2007 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83283||ISSN:||07413106||DOI:||10.1109/LED.2007.896892|
|Appears in Collections:||Staff Publications|
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