Please use this identifier to cite or link to this item:
|Title:||Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors||Authors:||Tan, K.-M.
|Issue Date:||24-Apr-2007||Citation:||Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yoo, W.-J., Yeo, Y.-C. (2007-04-24). Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (4 B) : 2058-2061. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.46.2058||Abstract:||Strained p-channel fin-type field-effect transistors (FinFETs) with SiGe source and drain (S/D) regions formed by a Ge condensation process is demonstrated. SiGe epitaxial layer was grown on the sidewalls at the S/D regions after a successful removal of both the poly silicon gate and nitride spacer stringer. Condensation of the SiGe at the S/D region was subsequently performed. The novel local Ge condensation not only drives Ge into the Si fin and/or increases the Ge concentration in the S/D regions for enhanced strain effects, but also eliminates the need for S/D recess etch, leading to process simplicity. Compared to a FinFET with uncondensed Si1-xGex S/D, FinFETs with condensed Si1-yGey S/D exhibit 28% higher drive current. Devices with gate lengths down to 26 nm were demonstrated with excellent control of short-channel effects. ©2007 The Japan Society of Applied Physics.||Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers||URI:||http://scholarbank.nus.edu.sg/handle/10635/83108||ISSN:||00214922||DOI:||10.1143/JJAP.46.2058|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 31, 2023
WEB OF SCIENCETM
checked on Jan 24, 2023
checked on Feb 2, 2023
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.