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|Title:||Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors|
|Citation:||Tan, K.-M., Liow, T.-Y., Lee, R.T.P., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yoo, W.-J., Yeo, Y.-C. (2007-04-24). Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 46 (4 B) : 2058-2061. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.46.2058|
|Abstract:||Strained p-channel fin-type field-effect transistors (FinFETs) with SiGe source and drain (S/D) regions formed by a Ge condensation process is demonstrated. SiGe epitaxial layer was grown on the sidewalls at the S/D regions after a successful removal of both the poly silicon gate and nitride spacer stringer. Condensation of the SiGe at the S/D region was subsequently performed. The novel local Ge condensation not only drives Ge into the Si fin and/or increases the Ge concentration in the S/D regions for enhanced strain effects, but also eliminates the need for S/D recess etch, leading to process simplicity. Compared to a FinFET with uncondensed Si1-xGex S/D, FinFETs with condensed Si1-yGey S/D exhibit 28% higher drive current. Devices with gate lengths down to 26 nm were demonstrated with excellent control of short-channel effects. ©2007 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Appears in Collections:||Staff Publications|
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