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https://doi.org/10.1109/LED.2009.2017213
Title: | Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance | Authors: | Lee, R.T.-P. Lim, A.E.-J. Tan, K.-M. Liow, T.-Y. Chi, D.Z. Yeo, Y.-C. |
Keywords: | External resistance FinFET Platinum silicide Schottky barrier Silicon carbon Sulfur |
Issue Date: | 2009 | Citation: | Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance. IEEE Electron Device Letters 30 (5) : 472-474. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2017213 | Abstract: | In this letter, sulfur (S) segregation was exploited to attain a record-low electron barrier height ΦB N) of 110 meV for platinum-based silicide contacts. Sulfur-incorporated PtSi:C/Si:C contacts were also demonstrated in strained FinFETs with Si:C source/drain stressors. Incorporation of sulfur at the PtSi:C/Si:C interface in the source/drain regions of FinFETs provides a 51% improvement in external resistances and a 45% enhancement in drive current as compared to devices without S segregation. The remarkable reduction in ΦB N is explained using charge transfer and dipole formation at the silicide/semiconductor interface with S segregation. © 2009 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83114 | ISSN: | 07413106 | DOI: | 10.1109/LED.2009.2017213 |
Appears in Collections: | Staff Publications |
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