Please use this identifier to cite or link to this item:
|Title:||Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance|
|Authors:||Lee, R.T.-P. |
|Citation:||Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance. IEEE Electron Device Letters 30 (5) : 472-474. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2017213|
|Abstract:||In this letter, sulfur (S) segregation was exploited to attain a record-low electron barrier height ΦB N) of 110 meV for platinum-based silicide contacts. Sulfur-incorporated PtSi:C/Si:C contacts were also demonstrated in strained FinFETs with Si:C source/drain stressors. Incorporation of sulfur at the PtSi:C/Si:C interface in the source/drain regions of FinFETs provides a 51% improvement in external resistances and a 45% enhancement in drive current as compared to devices without S segregation. The remarkable reduction in ΦB N is explained using charge transfer and dipole formation at the silicide/semiconductor interface with S segregation. © 2009 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 15, 2018
WEB OF SCIENCETM
checked on May 22, 2018
checked on May 25, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.