Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2017213
Title: Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
Authors: Lee, R.T.-P. 
Lim, A.E.-J.
Tan, K.-M.
Liow, T.-Y.
Chi, D.Z.
Yeo, Y.-C. 
Keywords: External resistance
FinFET
Platinum silicide
Schottky barrier
Silicon carbon
Sulfur
Issue Date: 2009
Citation: Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance. IEEE Electron Device Letters 30 (5) : 472-474. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2017213
Abstract: In this letter, sulfur (S) segregation was exploited to attain a record-low electron barrier height ΦB N) of 110 meV for platinum-based silicide contacts. Sulfur-incorporated PtSi:C/Si:C contacts were also demonstrated in strained FinFETs with Si:C source/drain stressors. Incorporation of sulfur at the PtSi:C/Si:C interface in the source/drain regions of FinFETs provides a 51% improvement in external resistances and a 45% enhancement in drive current as compared to devices without S segregation. The remarkable reduction in ΦB N is explained using charge transfer and dipole formation at the silicide/semiconductor interface with S segregation. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83114
ISSN: 07413106
DOI: 10.1109/LED.2009.2017213
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