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|Title:||Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance|
|Authors:||Lee, R.T.-P. |
|Citation:||Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance. IEEE Electron Device Letters 30 (5) : 472-474. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2017213|
|Abstract:||In this letter, sulfur (S) segregation was exploited to attain a record-low electron barrier height ΦB N) of 110 meV for platinum-based silicide contacts. Sulfur-incorporated PtSi:C/Si:C contacts were also demonstrated in strained FinFETs with Si:C source/drain stressors. Incorporation of sulfur at the PtSi:C/Si:C interface in the source/drain regions of FinFETs provides a 51% improvement in external resistances and a 45% enhancement in drive current as compared to devices without S segregation. The remarkable reduction in ΦB N is explained using charge transfer and dipole formation at the silicide/semiconductor interface with S segregation. © 2009 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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