Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2017213
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dc.titleSulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
dc.contributor.authorLee, R.T.-P.
dc.contributor.authorLim, A.E.-J.
dc.contributor.authorTan, K.-M.
dc.contributor.authorLiow, T.-Y.
dc.contributor.authorChi, D.Z.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:37:26Z
dc.date.available2014-10-07T04:37:26Z
dc.date.issued2009
dc.identifier.citationLee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance. IEEE Electron Device Letters 30 (5) : 472-474. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2017213
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83114
dc.description.abstractIn this letter, sulfur (S) segregation was exploited to attain a record-low electron barrier height ΦB N) of 110 meV for platinum-based silicide contacts. Sulfur-incorporated PtSi:C/Si:C contacts were also demonstrated in strained FinFETs with Si:C source/drain stressors. Incorporation of sulfur at the PtSi:C/Si:C interface in the source/drain regions of FinFETs provides a 51% improvement in external resistances and a 45% enhancement in drive current as compared to devices without S segregation. The remarkable reduction in ΦB N is explained using charge transfer and dipole formation at the silicide/semiconductor interface with S segregation. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2009.2017213
dc.sourceScopus
dc.subjectExternal resistance
dc.subjectFinFET
dc.subjectPlatinum silicide
dc.subjectSchottky barrier
dc.subjectSilicon carbon
dc.subjectSulfur
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2009.2017213
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume30
dc.description.issue5
dc.description.page472-474
dc.description.codenEDLED
dc.identifier.isiut000265711700016
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