Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2009.2017213
DC Field | Value | |
---|---|---|
dc.title | Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance | |
dc.contributor.author | Lee, R.T.-P. | |
dc.contributor.author | Lim, A.E.-J. | |
dc.contributor.author | Tan, K.-M. | |
dc.contributor.author | Liow, T.-Y. | |
dc.contributor.author | Chi, D.Z. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:37:26Z | |
dc.date.available | 2014-10-07T04:37:26Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Lee, R.T.-P., Lim, A.E.-J., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance. IEEE Electron Device Letters 30 (5) : 472-474. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2017213 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83114 | |
dc.description.abstract | In this letter, sulfur (S) segregation was exploited to attain a record-low electron barrier height ΦB N) of 110 meV for platinum-based silicide contacts. Sulfur-incorporated PtSi:C/Si:C contacts were also demonstrated in strained FinFETs with Si:C source/drain stressors. Incorporation of sulfur at the PtSi:C/Si:C interface in the source/drain regions of FinFETs provides a 51% improvement in external resistances and a 45% enhancement in drive current as compared to devices without S segregation. The remarkable reduction in ΦB N is explained using charge transfer and dipole formation at the silicide/semiconductor interface with S segregation. © 2009 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2009.2017213 | |
dc.source | Scopus | |
dc.subject | External resistance | |
dc.subject | FinFET | |
dc.subject | Platinum silicide | |
dc.subject | Schottky barrier | |
dc.subject | Silicon carbon | |
dc.subject | Sulfur | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2009.2017213 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 30 | |
dc.description.issue | 5 | |
dc.description.page | 472-474 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000265711700016 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.