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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Date Issued:  [2000 TO 2021]
Author:  Kwong, D.-L.
Author:  Ren, C.

Results 1-20 of 22 (Search time: 0.011 seconds).

Issue DateTitleAuthor(s)
1Aug-2004A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gateRen, C.; Yu, H.Y. ; Kang, J.F.; Wang, X.P.; Ma, H.H.H. ; Yeo, Y.-C. ; Chan, D.S.H. ; Li, M.-F. ; Kwong, D.-L.
22004Characteristics of sub-1 nm CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Wang, Y.Y.; Kwong, D.-L.
3Nov-2007CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
42007CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixingRen, C.; Chan, D.S.H. ; Loh, W.Y.; Peng, J.W.; Balakumar, S.; Jiang, Y.; Tung, C.H.; Du, A.Y.; Lo, G.Q.; Kumar, R.; Balasubramanian, N.; Kwong, D.-L.
5May-2004Fermi pinning-induced thermal instability of metal-gate work functionsYu, H.Y. ; Ren, C.; Yeo, Y.-C. ; Kang, J.F. ; Wang, X.P.; Ma, H.H.H. ; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
6Mar-2004Fermi-Level Pinning Induced Thermal Instability in the Effective Work Function of TaN in TaN/SiO 2 Gate StackRen, C.; Yu, H.Y. ; Kang, J.F. ; Hou, Y.T. ; Li, M.-F. ; Wang, W.D.; Chan, D.S.H. ; Kwong, D.-L.
7Jul-2007Flicker noise and its degradation characteristics under electrical stress in MOSFETs with thin strained-Si/SiGe dual-quantum wellJiang, Y.; Loh, W.Y.; Chan, D.S.H. ; Xiong, Y.Z.; Ren, C.; Lim, Y.F.; Lo, G.Q.; Kwong, D.-L.
8Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
92005Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devicesRen, C.; Chan, D.S.H. ; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Kwong, D.-L.
10Sep-2005Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting trapsSa, N.; Kang, J.F.; Yang, H.; Liu, X.Y.; He, Y.D.; Han, R.Q.; Ren, C.; Yu, H.Y.; Chan, D.S.H. ; Kwong, D.-L.
1115-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
12Feb-2004Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device ApplicationsYu, H.Y. ; Kang, J.F. ; Ren, C.; Chen, J.D. ; Hou, Y.T. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Kwong, D.-L.
132007Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y.; Ren, C.; Sa, N.; Yang, H.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
142005Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature processKang, J.F.; Yu, H.Y.; Ren, C.; Yang, H.; Sa, N.; Liu, X.Y.; Han, R.Q.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
152004TDDB characteristics of ultra-thin HfN/HfO2 gate stackYang, H.; Sa, N.; Tang, L.; Liu, X.; Kang, J.; Han, R.; Yu, H.Y. ; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
161-Mar-2004Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputteringKang, J.F. ; Yu, H.Y. ; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Hu, H.; Lim, H.F. ; Wang, W.D.; Gui, D.; Kwong, D.-L.
172003Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS DevicesYu, H.Y. ; Kang, J.F. ; Chen, J.D. ; Ren, C.; Hou, Y.T. ; Whang, S.J. ; Li, M.-F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Du, A.; Kwong, D.-L.
18Feb-2005Thermally robust TaTbxN metal gate electrode for n-MOSFETs applicationsRen, C.; Yu, H.Y. ; Wang, X.P.; Ma, H.H.H. ; Chan, D.S.H. ; Li, M.-F. ; Yeo, Y.-C. ; Tung, C.H.; Balasubramanian, N.; Huan, A.C.H.; Pan, J.S.; Kwong, D.-L.
192005Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature processKang, J.F.; Yu, H.Y.; Ren, C.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Kwong, D.-L.
20Aug-2006Work function tuning and material characteristics of lanthanide-incorporated metal nitride gate electrodes for NMOS device applicationsRen, C.; Chan, D.S.H. ; Li, M.-F. ; Loh, W.-Y.; Balakumar, S.; Tung, C.H.; Balasubramanian, N.; Kwong, D.-L.