Please use this identifier to cite or link to this item:
|Title:||Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process||Authors:||Kang, J.F.
|Issue Date:||2005||Citation:||Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Liu, X.Y., Kwong, D.-L. (2005). Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process. Electrochemical and Solid-State Letters 8 (11) : G311-G313. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2052051||Abstract:||High quality TaN/HfN/HfO2 gate stacks with 0.65 nm of the equivalent oxide thickness and 0.3 A/cm2 at (-1V + VFB) of the gate leakage have been demonstrated. An NH3-based Si-surface nitridation process was performed prior to HfO2 deposition. The HfO2 films were deposited in a metallorganic chemical vapor deposition cluster tool. The TaN/HfN metal stacked layers were deposited on HfO2 by reactive sputtering. The gate stack shows excellent thermal stability, in equivalent oxide thickness (EOT) and leakage after 1000°C annealing. A 10-year time dependent dielectric breakdown lifetime of 1000°C rapid thermal anneal annealed HfN/HfO2 stack is projected at V g = -3 V with an EOT = 0.75 nm. © 2005 The Electrochemical Society. All rights reserved.||Source Title:||Electrochemical and Solid-State Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/83243||ISSN:||10990062||DOI:||10.1149/1.2052051|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 16, 2021
WEB OF SCIENCETM
checked on Jan 8, 2021
checked on Jan 18, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.