Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2052051
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dc.titleUltrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process
dc.contributor.authorKang, J.F.
dc.contributor.authorYu, H.Y.
dc.contributor.authorRen, C.
dc.contributor.authorLi, M.-F.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorLiu, X.Y.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:38:59Z
dc.date.available2014-10-07T04:38:59Z
dc.date.issued2005
dc.identifier.citationKang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Liu, X.Y., Kwong, D.-L. (2005). Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process. Electrochemical and Solid-State Letters 8 (11) : G311-G313. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2052051
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83243
dc.description.abstractHigh quality TaN/HfN/HfO2 gate stacks with 0.65 nm of the equivalent oxide thickness and 0.3 A/cm2 at (-1V + VFB) of the gate leakage have been demonstrated. An NH3-based Si-surface nitridation process was performed prior to HfO2 deposition. The HfO2 films were deposited in a metallorganic chemical vapor deposition cluster tool. The TaN/HfN metal stacked layers were deposited on HfO2 by reactive sputtering. The gate stack shows excellent thermal stability, in equivalent oxide thickness (EOT) and leakage after 1000°C annealing. A 10-year time dependent dielectric breakdown lifetime of 1000°C rapid thermal anneal annealed HfN/HfO2 stack is projected at V g = -3 V with an EOT = 0.75 nm. © 2005 The Electrochemical Society. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2052051
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.2052051
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume8
dc.description.issue11
dc.description.pageG311-G313
dc.description.codenESLEF
dc.identifier.isiut000232340900032
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