Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2052051
Title: Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process
Authors: Kang, J.F.
Yu, H.Y.
Ren, C.
Li, M.-F. 
Chan, D.S.H. 
Liu, X.Y.
Kwong, D.-L.
Issue Date: 2005
Citation: Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Liu, X.Y., Kwong, D.-L. (2005). Ultrathin HfO2(EOT < 0.75 nm) gate stack with TaN/HfN electrodes fabricated using a high-temperature process. Electrochemical and Solid-State Letters 8 (11) : G311-G313. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2052051
Abstract: High quality TaN/HfN/HfO2 gate stacks with 0.65 nm of the equivalent oxide thickness and 0.3 A/cm2 at (-1V + VFB) of the gate leakage have been demonstrated. An NH3-based Si-surface nitridation process was performed prior to HfO2 deposition. The HfO2 films were deposited in a metallorganic chemical vapor deposition cluster tool. The TaN/HfN metal stacked layers were deposited on HfO2 by reactive sputtering. The gate stack shows excellent thermal stability, in equivalent oxide thickness (EOT) and leakage after 1000°C annealing. A 10-year time dependent dielectric breakdown lifetime of 1000°C rapid thermal anneal annealed HfN/HfO2 stack is projected at V g = -3 V with an EOT = 0.75 nm. © 2005 The Electrochemical Society. All rights reserved.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83243
ISSN: 10990062
DOI: 10.1149/1.2052051
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