1. ScholarBank@NUS

Osipowicz Thomas

rp05639

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Osipowicz Thomas
Variants
Osipowitcz, T.
Osipowicz, T.
OSIPOWICZ, THOMAS
Osiposwicz, T.
Thomas, O.
Osipowice, T.
Osipowicz Thomas
 
Main Affiliation
 
Faculty
 
Email
phyto@nus.edu.sg
 

Publications

Refined By:
Department:  ELECTRICAL AND COMPUTER ENGINEERING
Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 1-17 of 17 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
12005Analysis of E-field distributions within high-power devices using IBIC microscopyZmeck, M.; Balk, L.J.; Heiderhoff, R.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.-J.; Schulze, H.-J.
22005Analysis of premature breakdown in high-power devices using IBIC microscopyZmeck, M.; Balk, L.J.; Pugatschow, A.; Niedernostheide, F.-J.; Schulze, H.-J.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. 
32000Characterization of Ni- and Ni(Pt)-silicide formation on narrow polycrystalline Si lines by Raman spectroscopyLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Osipowicz, T. ; Ho, C.S.; Chen, G.L.; Chan, L.
4Sep-2002Effect of ion implantation on layer inversion of Ni silicided poly-SiLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; Chan, L.
5Jan-2002Enhanced stability of Ni monosilicide on MOSFETs poly-Si gate stackLee, P.S.; Mangelinck, D.; Pey, K.L. ; Ding, J. ; Chi, D.Z.; Osipowicz, T. ; Dai, J.Y.; See, A.
615-Mar-2004Epitaxial growth of co-doped Eu and Sm in α-Zn0.05Sr 0.95S on (0 0 1)MgO substrate using α-MnS buffer layerChen, C.; Teo, K.L. ; Chong, T.C. ; Wu, Y.H. ; Osipowicz, T. ; Anisur Rahman, Md.
72005Formation and thermal stability of nickel germanide on germanium substrateZhang, Q.; Nan, W.U.; Osipowicz, T. ; Bera, L.K.; Zhu, C. 
81-Nov-2010Formation of epitaxial metastable NiGe2 thin film on Ge(100) by pulsed excimer laser annealLim, P.S.Y.; Chi, D.Z.; Lim, P.C.; Wang, X.C.; Chan, T.K. ; Osipowicz, T. ; Yeo, Y.-C. 
921-Jan-2004Ion beam induced charge microscopy studies of power diodesZmeck, M.; Balk, L.J.; Osipowicz, T. ; Watt, F. ; Phang, J.C.H. ; Khambadkone, A.M. ; Niedernostheide, F.-J.; Schulze, H.-J.
10Mar-2002Layer inversion of Ni(Pt)Si on mixed phase Si filmsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Osipowicz, T. ; See, A.
1118-May-2006Magnetic and transport properties of Ge : MMMn granular systemLi, H.; Wu, Y. ; Liu, T. ; Wang, S.; Guo, Z.; Osipowicz, T. 
12Mar-2000Micro-Raman spectroscopy investigation of nickel silicides and nickel (platinum) silicidesLee, P.S.; Mangelinck, D.; Pey, K.L. ; Shen, Z.X. ; Ding, J. ; Osipowicz, T. ; See, A.
13Sep-2003Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopyZmeck, M.; Balk, L.; Osipowicz, T. ; Watt, F. ; Phang, J. ; Khambadkone, A. ; Niedernostheide, F.-J.; Schulze, H.-J.
142007Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETsLee, R.T.P. ; Liow, T.-Y.; Tan, K.-M.; Lim, A.E.-J.; Ho, C.-S.; Hoe, K.-M.; Lai, M.Y.; Osipowicz, T. ; Lo, G.-Q.; Samudra, G. ; Chi, D.-Z.; Yeo, Y.-C. 
152008Performance enhancement schemes featuring lattice mismatched S/D stressors concurrently realized on CMOS platform: e-SiGeSn S/D for pFETs by Sn+ implant and SiC S/D for nFETs by C+ implantWang, G.H.; Toh, E.-H.; Wang, X.; Seng, D.H.L.; Tripathy, S.; Osipowicz, T. ; Tau, K.C.; Samudra, G. ; Yeo, Y.-C. 
162007Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealingWang, G.H.; Toh, E.-H.; Wang, X.; Tripathy, S.; Osipowicz, T. ; Chan, T.K. ; Hoe, K.-M.; Balakumar, S.; Lo, G.-Q.; Samudra, G. ; Yeo, Y.-C. 
172007Structural, magnetic, and transport investigations of CrTe clustering effect in (Zn,Cr)Te systemSreenivasan, M.G.; Teo, K.L. ; Cheng, X.Z.; Jalil, M.B.A.; Liew, T.; Chong, T.C.; Du, A.Y.; Chan, T.K. ; Osipowicz, T.