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Tan Leng Seow

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Full Name
Tan Leng Seow
Variants
Tan, Leng Seow
Tan, L.S.
Tan, L.-S.
 
Main Affiliation
 
Faculty
 
Email
sletanls@nus.edu.sg
 
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Publications

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Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 1-20 of 60 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
12008A new silane-ammonia surface passivation technology for realizing inversion-type surface-channel aAs N-MOSFET with 160 nm gate length and high-quality metal-gate/high-k dielectric stackChin, H.-C.; Zhu, M. ; Lee, Z.-C.; Liu, X.; Tan, K.-M.; Lee, H.K.; Shi, L. ; Tang, L.-J.; Tung, C.-H. ; Lo, G.-Q.; Tan, L.-S. ; Yeo, Y.-C. 
22004Activation of beryllium-implanted gallium nitride by combined pulse laser and rapid thermal annealingTan, L.S. ; Wang, H.T.; Chor, E.F. 
326-Mar-2007AlGaN/GaN high electron mobility transistors with implanted ohmic contactsWang, H.T.; Tan, L.S. ; Chor, E.F. 
4Apr-2013AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with a high breakdown voltage of 1400 v and a complementary metal-oxide- semiconductor compatible gold-free processLiu, X.; Zhan, C.; Wai Chan, K.; Samuel Owen, M.H.; Liu, W.; Chi, D.Z.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
5Jun-2012AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistor with breakdown voltage of 800v and on-state resistance of 3mΩ·cm 2 using a complementary metal-oxide-semiconductor compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Chen, K.J.; Yeo, Y.-C. 
62012AlGaN/GaN-on-silicon MOS-HEMTs with breakdown voltage of 800 V and on-state resistance of 3 mΩ.cm 2 using a CMOS-compatible gold-free processLiu, X.; Zhan, C.; Chan, K.W.; Liu, W.; Tan, L.S. ; Teo, K.L. ; Chen, K.J.; Yeo, Y.-C. 
7Sep-2002Analysis of AlGaAs/GaAs/InGaAs n-type step multiple quantum wells for the optimization of normal incident absorptionCheah, C.W.; Karunasiri, G.; Tan, L.S. 
815-Apr-2002Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III-V semiconductor Γ quantum wellsCheah, C.W.; Tan, L.S. ; Karunasiri, G.
92010Asymmetrical magneto-impedance effect in NiFe/SiO2/Cu composite wire with a sputtered NiFe seed layerFan, J. ; Ning, N. ; Yi, J.B. ; Tan, L.S. ; Li, X.P. 
102007Band offset measurements of the pulsed-laser-deposition-grown Sc 2O3 (111)/GaN (0001) heterostructure by X-ray photoelectron spectroscopyLiu, C.; Chor, E.F. ; Tan, L.S. ; Dong, Y.
112004Boron profile narrowing in laser-processed silicon after rapid thermal annealPoon, C.H.; Tan, L.S. ; Cho, B.J. ; See, A.; Bhat, M.
12Jan-2002Characterization of ultrashallow dopant profiles using spreading resistance profilingTan, L.S. ; Tan, L.C.P.; Leong, M.S. ; Mazur, R.G.; Ye, C.W.
132010Diamond-like carbon (DLC) liner with highly compressive stress formed on algan/gan mos-hemts with in situ silane surface passivation for performance enhancementLiu, X.; Liu, B.; Low, E.K.F.; Chin, H.-C.; Liu, W.; Yang, M.; Tan, L.S. ; Yeo, Y.-C. 
142005Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealingPoon, C.H.; Tan, L.S. ; Cho, B.J. ; Du, A.Y.
1526-Mar-2007Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-GanLim, J.; Chor, E.F. ; Tan, L.S. 
161-May-2009Effects of femtosecond laser ablation on Vitrovac 6025XTan, L.S. ; Seet, H.L. ; Hong, M.H. ; Li, X.P. 
171-Aug-2004Effects of surface plasma treatment on n-GaN ohmic contact formationLi, L.K.; Tan, L.S. ; Chor, E.F. 
18Sep-2004Electrical evaluation of laser annealed junctions by Hall measurementsPoon, C.H.; Tan, L.S. ; Cho, B.J. ; Ng, K.T.; Bhat, M.; Chan, L.
191-May-2007Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxideLiu, C.; Chor, E.F. ; Tan, L.S. 
202007Epitaxial growth of Sc2 O3 films on GaN (0001) by pulsed laser depositionLiu, C.; Chor, E.F. ; Tan, L.S. ; Du, A.