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Pey Kin Leong

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Full Name
Pey Kin Leong
Variants
PEY, KIN-LEONG
PEY, KIN L.
LEONG, KIN
Pey, Kin Leong
PEY, KIN LEONG
Pey, K.L.
 
Main Affiliation
 
Faculty
 

Publications

Results 21-40 of 70 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
212000Estimation of the area of voids in deep-submicron aluminium interconnects using resistance-noise measurementsChu, L.W.; Pey, K.L. ; Chim, W.K. ; Loh, S.K.; Er, E.
222002Experimental characterization of the reliability of 3-terminal dual-damascene copper interconnect treesGan, C.L.; Thompson, C.V.; Pey, K.L. ; Choi, W.K. ; Wei, F.; Yu, B.; Hau-Riege, S.P.
236-Jun-1996Formation of microporous polymeric materials by microemulsion polymerization of methyl methacrylate and 2-hydroxyethyl methacrylateChieng, T.H.; Gan, L.M. ; Chew, C.H. ; Ng, S.C. ; Pey, K.L. 
2415-Jun-2000Formation of voids in Ti-salicided BF+ 2-doped submicron polysilicon linesChua, H.N.; Pey, K.L. ; Lai, W.H.; Siah, S.Y.
2523-Nov-1993High efficiency cathodoluminescence detector with high discrimination against backscattered electronsPHANG, JACOB C. H. ; CHAN, DANIEL S. H. ; PEY, KIN L. 
261999Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical propertiesChua, H.N.; Pey, K.L. ; Siah, S.Y.; Ong, L.Y.; Lim, E.H.; Gan, C.L.; See, K.H. ; Ho, C.S.
27Apr-2002Impacts of buffer oxide layer in nitride/oxide stack gate dielectrics on the device performance and dielectric reliabilityLin, W.H.; Pey, K.L. ; Dong, Z.; Lim, V.S.K.; Chooi, S.Y.M.; Zhou, M.S.; Ang, C.H.; Ang, T.C.; Lau, W.S.
28Dec-2000Improved NiSi salicide process using presilicide N2 + implant for MOSFETsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Wee, A.T.S. ; Chan, L.
2921-Sep-1999In-line process monitoring using micro-raman spectroscopyLIM, ENG HUA; PEY, KIN-LEONG ; WONG, HARIANTO; LEE, KONG HEAN
3020-May-2003Incorporation of dielectric layer onto SThM tips for direct thermal analysisHU, CHANG CHAUN; PEY, KIN LEONG ; CHONG, YUNG FU; KIN, CHIM WAI ; NEUZIL, PAVEL; CHAN, LAP
311-Jul-2002Interfacial reactions of Ni on Si 1-xGe x (x=0.2,0.3) at low temperature by rapid thermal annealingZhao, H.B.; Pey, K.L. ; Choi, W.K. ; Chattopadhyay, S.; Fitzgerald, E.A.; Antoniadis, D.A.; Lee, P.S.
12Dec-1993Investigation of dislocations in GaAs using cathodoluminescence in the scanning electron microscopePey, K.L. ; Phang, J.C.H. ; Chan, D.S.H. ; Balk, L.J.; Jakubowicz, A.; Bresse, J.F.; Myhajlenko, S.
1311-Nov-2002Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Thompson, M.O.; Tung, C.H.; See, A.
14Dec-2001Laser-induced titanium disilicide formation for submicron technologiesChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Shen, Z.X. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
15Mar-2002Layer inversion of Ni(Pt)Si on mixed phase Si filmsLee, P.S.; Pey, K.L. ; Mangelinck, D.; Ding, J. ; Osipowicz, T. ; See, A.
162002Length effects on the reliability of dual-damascene Cu interconnectsWei, F.; Gan, C.L.; Thompson, C.V.; Clement, J.J.; Hau-Riege, S.P.; Pey, K.L. ; Choi, W.K. ; Tay, H.L.; Yu, B.; Radhakrishnan, M.K.
171999Line-width dependence of void formation in TI-salicided BF 2-doped polysilicon linesChua, H.N.; Pey, K.L. ; Siah, S.Y.; Lim, E.H.; Ho, C.S.
186-Nov-2000Liquid-phase epitaxial growth of amorphous silicon during laser annealing of ultrashallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Lu, Y.F. ; Wee, A.T.S. ; Osipowicz, T. ; Seng, H.L. ; See, A.; Dai, J.-Y.
1924-Jan-2012Method for fabricating semiconductor devices with shallow diffusion regionsTAN, DEXTER XUEMING; COLOMBEAU, BENJAMIN; ONG, CLARK KUANG KIAN; YEONG, SAI HOOI; NG, CHEE MANG ; PEY, KIN LEONG 
2015-Feb-2011Method for forming a shallow junction region using defect engineering and laser annealingONG, KUANG KIAN; YEONG, SAI HOOI; PEY, KIN LEONG ; CHAN, LAP; CHONG, YUNG FU