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|Title:||Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties||Authors:||Chua, H.N.
|Issue Date:||1999||Citation:||Chua, H.N.,Pey, K.L.,Siah, S.Y.,Ong, L.Y.,Lim, E.H.,Gan, C.L.,See, K.H.,Ho, C.S. (1999). Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 44-49. ScholarBank@NUS Repository.||Abstract:||We report the effect of voids in Ti-salicided narrow p+-doped polysilicon lines on the electrical performance of the TiSi2 films. The variation in the sheet resistance of the TiSi2 was found to correlate well to the void density, which is a function of the polySi implant species and dose, the gate line-width and the p+ anneal. In addition, we find that the low frequency noise measurements is a good diagnostic method to determine the extent of voiding in silicided films.||Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA||URI:||http://scholarbank.nus.edu.sg/handle/10635/81467|
|Appears in Collections:||Staff Publications|
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