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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/81467
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dc.titleImpact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties
dc.contributor.authorChua, H.N.
dc.contributor.authorPey, K.L.
dc.contributor.authorSiah, S.Y.
dc.contributor.authorOng, L.Y.
dc.contributor.authorLim, E.H.
dc.contributor.authorGan, C.L.
dc.contributor.authorSee, K.H.
dc.contributor.authorHo, C.S.
dc.date.accessioned2014-10-07T03:08:38Z
dc.date.available2014-10-07T03:08:38Z
dc.date.issued1999
dc.identifier.citationChua, H.N.,Pey, K.L.,Siah, S.Y.,Ong, L.Y.,Lim, E.H.,Gan, C.L.,See, K.H.,Ho, C.S. (1999). Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 44-49. ScholarBank@NUS Repository.
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81467
dc.description.abstractWe report the effect of voids in Ti-salicided narrow p+-doped polysilicon lines on the electrical performance of the TiSi2 films. The variation in the sheet resistance of the TiSi2 was found to correlate well to the void density, which is a function of the polySi implant species and dose, the gate line-width and the p+ anneal. In addition, we find that the low frequency noise measurements is a good diagnostic method to determine the extent of voiding in silicided films.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.sourcetitleProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.description.page44-49
dc.description.coden234
dc.identifier.isiutNOT_IN_WOS
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