Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Refined By:
Date Issued:  [2000 TO 2023]
Type:  Conference Paper

Results 1-20 of 53 (Search time: 0.011 seconds).

Issue DateTitleAuthor(s)
12000Application of excimer laser annealing in the formation of ultra-shallow p+/n junctionsChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; See, A. ; Tung, C.-H. ; Gopalakrishnan, R. ; Lu, Y.F. 
210-May-2006Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integrationYang, L.Y.; Zhang, D.H.; Li, C.Y.; Liu, R. ; Lu, P.W.; Foo, P.D.; Wee, A.T.S. 
320-Jan-2002Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, A.T.S. 
42003Defects and surfactant action of antimony on GaAs and GaAs 1-xNxon GaAs [100] by molecular beam epitaxyCheah, W.K.; Fan, W.J.; Yoon, S.F.; Wicaksono, S.; Liu, R. ; Wee, A.T.S. 
5Aug-2001Degradation effect of a ZnO layer on ZnS: Comparison between a Monte Carlo simulation and experimental Auger and CL measurementsDong, G.; Liangzhen, C.; Rong, L.; Wee, A.T.S. 
61-Aug-2004Determination of nitrogen composition in GaNxAs1-x epilayer on GaAsFan, W.J.; Yoon, S.F.; Cheah, W.K.; Loke, W.K.; Ng, T.K.; Wang, S.Z.; Liu, R. ; Wee, A. 
72007Development of highly efficient and high speed X-ray detectors using modern nanomaterialsCholewa, M. ; Lau, S.P.; Xingyu, G. ; Wee, A.T.S. ; Polak, W.; Lekki, J.; Stachura, Z.; Moser, H.O. 
8Apr-2003Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(0 0 1) surfacePrice, R.W.; Tok, E.S. ; Liu, R. ; Wee, A.T.S. ; Woods, N.J.; Zhang, J.
92000Effect of ITO carrier concentration on the performance of organic light-emitting diodesZhu, F.; Zhang, K.; Huan, C.H.A. ; Wee, A.T.S. ; Guenther, E.; Jin, C.S.
102014Effect of oxygen plasma on the optical properties of monolayer grapheneSantoso, I.; Singh, R.S.; Gogoi, P.K.; Asmara, T.C.; Wei, D.C.; Chen, W. ; Wee, A.T.S. ; Pereira, V.M. ; Rusydi, A. 
11Apr-2004Effect of parylene layer on the performance of OLEDKe, L.; Kumar, R.S.; Zhang, K.; Chua, S.-J.; Wee, A.T.S. 
121-Oct-2010Effects of CdCl2 treatment and annealing on CdS/SnO 2/glass heterostructures for solar cellsFeng, Z.C.; Wei, C.C.; Wee, A.T.S. ; Rohatgi, A.; Lu, W.
13May-2001Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profilingNg, C.M.; Wee, A.T.S. ; Huan, C.H.A. ; See, A.
142006Enhanced boron activation in strained-Si/Si1-xGex substrate using laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Wang, X.C.; Wong, L.H.
152010First principles prediction of materials for spintronics: From bulk to nanoShen, L. ; Zeng, M.G. ; Pan, H.; Lim, C.C.; Lu, Y.H. ; Xu, B. ; Sun, J.T. ; Yi, J.B. ; Yang, K.S.; Feng, Y.P. ; Ding, J. ; Yang, S.W.; Dai, Y.; Wee, A. ; Lin, J.Y.
162007Formation of silicided hyper-shallow p+/n- junctions by pulsed laser annealingPey, K.L.; Ong, K.K.; Lee, P.S.; Setiawan, Y.; Wang, X.C.; Wee, A.T.S. ; Lim, G.C.
172004Formation of ultra-shallow p +/n junctions in silicon-on-insulator (SOI) substrate using laser annealingOng, K.K.; Pey, K.L.; Lee, P.S.; Wee, A.T.S. ; Chong, Y.F.; Yeo, K.L.; Wang, X.C.
1814-Feb-2002Growth mechanisms in thin film epitaxy of Si/SiGe from hydridesZhang, J.; Woods, N.J.; Breton, G.; Price, R.W.; Hartell, A.D.; Lau, G.S.; Liu, R. ; Wee, A.T.S. ; Tok, E.S. 
192004Growth of Co nanoclusters on SiC honeycomb templatesChen, W. ; Loh, K.P. ; Xu, H. ; Wee, A.T.S. 
20Aug-2001Influence of sulphonation on polymer and polymer blend surfaces studied by atomic force microscopyWee, A.T.S. ; Guo, Y.P. ; Tan, K.C.; Wang, H.Q. ; Leong, T.K.; Huan, C.H.A.