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|Title:||Formation of silicided hyper-shallow p+/n- junctions by pulsed laser annealing||Authors:||Pey, K.L.
|Issue Date:||2007||Citation:||Pey, K.L.,Ong, K.K.,Lee, P.S.,Setiawan, Y.,Wang, X.C.,Wee, A.T.S.,Lim, G.C. (2007). Formation of silicided hyper-shallow p+/n- junctions by pulsed laser annealing. ECS Transactions 11 (6) : 379-394. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2778395||Abstract:||In this invited talk, we first review various methods for the formation of p+/n junctions of depth of less than 40nm using excimer pulsed laser annealing technique of 248nm wavelength. The characteristics of junctions formed using single and multiple-pulsed shallow melt and non-melt laser annealing on amorphous and single crystalline Si substrate would be compared. To overcome the defect-related enhanced diffusion during pulsed laser annealing, novel junction engineering methodology using implantation generated defects sich vacancies is illustrated. Methods employing ultra-low energy implants with laser annealing for junctions less than 25 nm are proposed. In addition, we will also talk briefly about the potential application of the laser annealing to be used for an ultra-low thermal budget silicide formation. ©The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/98723||ISBN:||9781566775724||ISSN:||19385862||DOI:||10.1149/1.2778395|
|Appears in Collections:||Staff Publications|
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