Full Name
SHEN LEI
Variants
Shen, L.
 
Main Affiliation
 
Faculty
 
Email
chmsl@nus.edu.sg
 

Publications

Results 1-20 of 35 (Search time: 0.003 seconds).

Issue DateTitleAuthor(s)
12012An all-Heusler design scheme for high-performance CPP-GMR read headsBai, Z.; Cai, Y. ; Shen, L. ; Han, G.; Feng, Y. 
223-Jan-2013Boron diffusion induced symmetry reduction and scattering in CoFeB/MgO/CoFeB magnetic tunnel junctionsBai, Z.; Shen, L. ; Wu, Q.; Zeng, M. ; Wang, J.-S. ; Han, G.; Feng, Y.P. 
331-Jan-2011Charge and spin transport in graphene-based heterostructureZeng, M. ; Shen, L. ; Yang, M. ; Zhang, C. ; Feng, Y. 
422-Oct-2008Charge-transfer-based mechanism for half-metallicity and ferromagnetism in one-dimensional organometallic sandwich molecular wiresShen, L. ; Yang, S.-W.; Ng, M.-F.; Ligatchev, V.; Zhou, L.; Feng, Y. 
52009Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineeringLu, Y.H. ; Wu, R.Q. ; Shen, L. ; Yang, M. ; Sha, Z.D.; Cai, Y.Q. ; He, P.M.; Feng, Y.P. 
614-Sep-2012Electron transmission modes in electrically biased graphene nanoribbons and their effects on device performanceShen, L. ; Zeng, M. ; Li, S.; Sullivan, M.B.; Feng, Y.P. 
725-Aug-2010Electron Transport Properties of Atomic Carbon Nanowires between Graphene ElectrodesShen, L. ; Zeng, M. ; Yang, S.-W.; Zhang, C. ; Wang, X.; Feng, Y. 
82009Electronic structures of Β -Si3 N4 (0001) /Si (111) interfaces: Perfect bonding and dangling bond effectsYang, M. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Sha, Z.D.; Cai, Y.Q. ; Feng, Y.P. ; Wang, S.J.
92009Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codopingYi, J.B. ; Shen, L. ; Pan, H. ; Van, L.H. ; Thongmee, S. ; Hu, J.F.; Ma, Y.W.; Ding, J. ; Feng, Y.P. 
102013Experimental evidences of topological surface states of β-Ag 2TeSulaev, A.; Ren, P.; Xia, B.; Lin, Q.H.; Yu, T.; Qiu, C.; Zhang, S.-Y.; Han, M.-Y.; Li, Z.P.; Zhu, W.G.; Wu, Q.; Feng, Y.P. ; Shen, L. ; Shen, S.-Q.; Wang, L.
112009Ferromagnetism in semiconductors doped with non-magnetic elementsFeng, Y.P. ; Pan, H. ; Wu, R.Q. ; Shen, L. ; Ding, J. ; Yi, J.B. ; Wu, Y.H. 
122010First principles prediction of materials for spintronics: From bulk to nanoShen, L. ; Zeng, M.G. ; Pan, H.; Lim, C.C.; Lu, Y.H. ; Xu, B. ; Sun, J.T. ; Yi, J.B. ; Yang, K.S.; Feng, Y.P. ; Ding, J. ; Yang, S.W.; Dai, Y.; Wee, A. ; Lin, J.Y.
132012First-principles study on new media/memory materials and design concept for nonvolatile data storageShen, L. ; Bai, Z.Q.; Goh, J.Q.; Feng, Y.P. 
14Nov-2008Geometry dependent I-V characteristics of silicon nanowiresNg, M.-F.; Shen, L. ; Zhou, L.; Yang, S.-W.; Tan, V.B.C. 
152009Glass forming abilities of binary Cu100-x Zrx (34, 35.5, and 38.2 at. %) metallic glasses: A LAMMPS studySha, Z.D.; Wu, R.Q. ; Lu, Y.H. ; Shen, L. ; Yang, M. ; Cai, Y.Q. ; Feng, Y.P. ; Li, Y. 
1614-Mar-2011Graphene-based bipolar spin diode and spin transistor: Rectification and amplification of spin-polarized currentZeng, M. ; Shen, L. ; Zhou, M.; Zhang, C. ; Feng, Y. 
172012Graphene-based spin diode and transistorZeng, M.G. ; Shen, L. ; Feng, Y.P. 
1828-Feb-2011Graphene-based spin logic gatesZeng, M. ; Shen, L. ; Su, H.; Zhang, C. ; Feng, Y. 
1915-Apr-2013High-performance giant-magnetoresistance junctions based on the all-Heusler architecture with matched energy bands and Fermi surfacesBai, Z.; Cai, Y. ; Shen, L. ; Han, G.; Feng, Y. 
202008Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy studyYang, M. ; Peng, G.W. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Chen, Q.; Feng, Y.P. ; Chai, J.W.; Pan, J.S.; Wang, S.J.