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|Title:||Graphene-based spin diode and transistor||Authors:||Zeng, M.G.
|Issue Date:||2012||Citation:||Zeng, M.G.,Shen, L.,Feng, Y.P. (2012). Graphene-based spin diode and transistor. 2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look! : -. ScholarBank@NUS Repository.||Abstract:||We demonstrate that spin polarization of a current in a graphene-based two-terminal device can be tuned by a source-drain voltage and the device functions as a bipolar spin diode. This is possible because of a symmetry selection rule. These properites allow the designs of spin transistor. © 2012 DSI.||Source Title:||2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look!||URI:||http://scholarbank.nus.edu.sg/handle/10635/70440||ISBN:||9789810720568|
|Appears in Collections:||Staff Publications|
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