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| Title: | Graphene-based spin diode and transistor | Authors: | Zeng, M.G. Shen, L. Feng, Y.P. |
Keywords: | graphene spin diode spin transistor |
Issue Date: | 2012 | Citation: | Zeng, M.G.,Shen, L.,Feng, Y.P. (2012). Graphene-based spin diode and transistor. 2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look! : -. ScholarBank@NUS Repository. | Abstract: | We demonstrate that spin polarization of a current in a graphene-based two-terminal device can be tuned by a source-drain voltage and the device functions as a bipolar spin diode. This is possible because of a symmetry selection rule. These properites allow the designs of spin transistor. © 2012 DSI. | Source Title: | 2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look! | URI: | http://scholarbank.nus.edu.sg/handle/10635/70440 | ISBN: | 9789810720568 |
| Appears in Collections: | Staff Publications |
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