Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70440
Title: Graphene-based spin diode and transistor
Authors: Zeng, M.G. 
Shen, L. 
Feng, Y.P. 
Keywords: graphene
spin diode
spin transistor
Issue Date: 2012
Source: Zeng, M.G.,Shen, L.,Feng, Y.P. (2012). Graphene-based spin diode and transistor. 2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look! : -. ScholarBank@NUS Repository.
Abstract: We demonstrate that spin polarization of a current in a graphene-based two-terminal device can be tuned by a source-drain voltage and the device functions as a bipolar spin diode. This is possible because of a symmetry selection rule. These properites allow the designs of spin transistor. © 2012 DSI.
Source Title: 2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look!
URI: http://scholarbank.nus.edu.sg/handle/10635/70440
ISBN: 9789810720568
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

44
checked on Dec 9, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.