Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70440
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dc.titleGraphene-based spin diode and transistor
dc.contributor.authorZeng, M.G.
dc.contributor.authorShen, L.
dc.contributor.authorFeng, Y.P.
dc.date.accessioned2014-06-19T03:12:09Z
dc.date.available2014-06-19T03:12:09Z
dc.date.issued2012
dc.identifier.citationZeng, M.G.,Shen, L.,Feng, Y.P. (2012). Graphene-based spin diode and transistor. 2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look! : -. ScholarBank@NUS Repository.
dc.identifier.isbn9789810720568
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70440
dc.description.abstractWe demonstrate that spin polarization of a current in a graphene-based two-terminal device can be tuned by a source-drain voltage and the device functions as a bipolar spin diode. This is possible because of a symmetry selection rule. These properites allow the designs of spin transistor. © 2012 DSI.
dc.sourceScopus
dc.subjectgraphene
dc.subjectspin diode
dc.subjectspin transistor
dc.typeConference Paper
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitle2012 Digest APMRC - Asia-Pacific Magnetic Recording Conference: A Strong Tradition. An Exciting New Look!
dc.description.page-
dc.identifier.isiutNOT_IN_WOS
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