Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3073943

Title:	Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping
Authors:	Yi, J.B. Shen, L. Pan, H. Van, L.H. Thongmee, S. Hu, J.F. Ma, Y.W. Ding, J. Feng, Y.P.
Issue Date:	2009
Citation:	Yi, J.B., Shen, L., Pan, H., Van, L.H., Thongmee, S., Hu, J.F., Ma, Y.W., Ding, J., Feng, Y.P. (2009). Enhancement of room temperature ferromagnetism in C-doped ZnO films by nitrogen codoping. Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3073943
Abstract:	The effect of nitrogen on the magnetic properties of C-doped ZnO has been investigated. It has been found that a low concentration of N doping does not lead to an apparent change of the magnetization in C-doped ZnO films. When N doping concentration exceeds 0.05 at. %, the magnetization of C-ZnO films increases significantly (more than 85%). The increased magnetization is mainly due to the enhanced moment of carbon, resulted from N doping. The successful fabrication of p -type diluted magnetic semiconductor may be of interest for spintronic applications. © 2009 American Institute of Physics.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/52612
ISSN:	00218979
DOI:	10.1063/1.3073943
Appears in Collections:	Staff Publications

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