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Wu Rongqin

rp09721

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Profile

Full Name
Wu Rongqin
(not current staff)
Variants
Wu, R.-Q.
Wu, R.Q.
Wu, R.
 
Main Affiliation
 
Faculty
 
Email
phywr@nus.edu.sg
 

Publications

Results 1-20 of 28 (Search time: 0.004 seconds).

Issue DateTitleAuthor(s)
12007Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectricYang, M. ; Wang, S.J.; Peng, G.W. ; Wu, R.Q. ; Feng, Y.P. 
22010Adsorption of an Mn atom on a ZnO sheet and nanotube: A density functional theory studyHe, A.L.; Wang, X.Q.; Wu, R.Q. ; Lu, Y.H. ; Feng, Y.P. 
32006Cu-doped GaN: A dilute magnetic semiconductor from first-principles studyWu, R.Q. ; Peng, G.W. ; Liu, L. ; Feng, Y.P. ; Huang, Z.G.; Wu, Q.Y.
419-Sep-2008Disorder and surface effects on work function of Ni-Pt metal gatesXu, G.; Wu, Q.; Chen, Z.; Huang, Z.; Wu, R. ; Feng, Y.P. 
52008Effect of atomic hydrogen on boron-doped germanium: An ab initio studyWu, R.Q. ; Yang, M. ; Feng, Y.P. ; Ouyang, Y.F.
62009Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineeringLu, Y.H. ; Wu, R.Q. ; Shen, L. ; Yang, M. ; Sha, Z.D.; Cai, Y.Q. ; He, P.M.; Feng, Y.P. 
72009Electronic structures of Β -Si3 N4 (0001) /Si (111) interfaces: Perfect bonding and dangling bond effectsYang, M. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Sha, Z.D.; Cai, Y.Q. ; Feng, Y.P. ; Wang, S.J.
82006Ferromagnetism in Mg-doped AlN from ab initio studyWu, R.Q. ; Peng, G.W. ; Liu, L. ; Feng, Y.P. ; Huang, Z.G.; Wu, Q.Y.
92009Ferromagnetism in semiconductors doped with non-magnetic elementsFeng, Y.P. ; Pan, H. ; Wu, R.Q. ; Shen, L. ; Ding, J. ; Yi, J.B. ; Wu, Y.H. 
101-May-2006First principles study on the interface of CrSbGaSb heterojunctionWu, R.Q. ; Liu, L. ; Peng, G.W. ; Feng, Y.P. 
112009Glass forming abilities of binary Cu100-x Zrx (34, 35.5, and 38.2 at. %) metallic glasses: A LAMMPS studySha, Z.D.; Wu, R.Q. ; Lu, Y.H. ; Shen, L. ; Yang, M. ; Cai, Y.Q. ; Feng, Y.P. ; Li, Y. 
122008Half-metallic NiO in zinc-blende structure from ab initio calculationsWu, R.Q. ; Feng, Y.P. ; Ouyang, Y.F.; Zhou, P.; Hu, C.H.
132009Impact of oxide defects on band offset at GeO2 /Ge interfaceYang, M. ; Wu, R.Q. ; Chen, Q.; Deng, W.S.; Feng, Y.P. ; Chai, J.W.; Pan, J.S.; Wang, S.J.
142008Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy studyYang, M. ; Peng, G.W. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Chen, Q.; Feng, Y.P. ; Chai, J.W.; Pan, J.S.; Wang, S.J.
1521-Mar-2005Magnetism in BN nanotubes induced by carbon dopingWu, R.Q. ; Liu, L. ; Peng, G.W. ; Feng, Y.P. 
162011Manipulating absorption and diffusion of H atom on graphene by mechanical strainYang, M. ; Nurbawono, A.; Zhang, C. ; Wu, R. ; Feng, Y. ; Ariando 
1729-Aug-2008Mechanism of ferromagnetism in nitrogen-doped ZnO: First-principle calculationsShen, L. ; Wu, R.Q. ; Pan, H.; Peng, G.W. ; Yang, M. ; Sha, Z.D.; Feng, Y.P. 
1830-Mar-2010Origin of d0 magnetism in II-VI and III-V semiconductors by substitutional doping at anion siteYang, K.; Wu, R. ; Shen, L. ; Feng, Y.P. ; Dai, Y.; Huang, B.
191-Jan-2006Phase transition mechanism in KIO3 single crystalsLiu, L. ; Wu, R.Q. ; Ni, Z.H.; Shen, Z.X. ; Feng, Y.P. 
202007Possible efficient p-type doping of AlN using Be: An ab initio studyWu, R.Q. ; Shen, L. ; Yang, M. ; Sha, Z.D.; Cai, Y.Q. ; Feng, Y.P. ; Huang, Z.G.; Wu, Q.Y.