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https://doi.org/10.1063/1.3040324
| Title: | Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy study | Authors: | Yang, M. Peng, G.W. Wu, R.Q. Deng, W.S. Shen, L. Chen, Q. Feng, Y.P. Chai, J.W. Pan, J.S. Wang, S.J. |
Issue Date: | 2008 | Citation: | Yang, M., Peng, G.W., Wu, R.Q., Deng, W.S., Shen, L., Chen, Q., Feng, Y.P., Chai, J.W., Pan, J.S., Wang, S.J. (2008). Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy study. Applied Physics Letters 93 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3040324 | Abstract: | We propose an interface model for Ge and its surface passivating nitride. The Β-Ge3N4 (0001)/Ge (111) interface structure does not have dangling bonds and is predicted to be exceptionally stable compared with other possible structures. Band offsets determined using x-ray photoemission spectroscopy study are in agreement with the prediction by first-principles calculations. The band offsets are large enough to minimize possible carrier tunneling. © 2008 American Institute of Physics. | Source Title: | Applied Physics Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/94075 | ISSN: | 00036951 | DOI: | 10.1063/1.3040324 |
| Appears in Collections: | Staff Publications |
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