Please use this identifier to cite or link to this item:
|Title:||Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy study||Authors:||Yang, M.
|Issue Date:||2008||Citation:||Yang, M., Peng, G.W., Wu, R.Q., Deng, W.S., Shen, L., Chen, Q., Feng, Y.P., Chai, J.W., Pan, J.S., Wang, S.J. (2008). Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy study. Applied Physics Letters 93 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3040324||Abstract:||We propose an interface model for Ge and its surface passivating nitride. The Β-Ge3N4 (0001)/Ge (111) interface structure does not have dangling bonds and is predicted to be exceptionally stable compared with other possible structures. Band offsets determined using x-ray photoemission spectroscopy study are in agreement with the prediction by first-principles calculations. The band offsets are large enough to minimize possible carrier tunneling. © 2008 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/94075||ISSN:||00036951||DOI:||10.1063/1.3040324|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 1, 2020
WEB OF SCIENCETM
checked on Jun 23, 2020
checked on Jun 27, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.