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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3040324
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dc.titleInterface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy study
dc.contributor.authorYang, M.
dc.contributor.authorPeng, G.W.
dc.contributor.authorWu, R.Q.
dc.contributor.authorDeng, W.S.
dc.contributor.authorShen, L.
dc.contributor.authorChen, Q.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorChai, J.W.
dc.contributor.authorPan, J.S.
dc.contributor.authorWang, S.J.
dc.date.accessioned2014-10-16T08:31:49Z
dc.date.available2014-10-16T08:31:49Z
dc.date.issued2008
dc.identifier.citationYang, M., Peng, G.W., Wu, R.Q., Deng, W.S., Shen, L., Chen, Q., Feng, Y.P., Chai, J.W., Pan, J.S., Wang, S.J. (2008). Interface properties of Ge3N4/Ge (111): Ab initio and x-ray photoemission spectroscopy study. Applied Physics Letters 93 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3040324
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/94075
dc.description.abstractWe propose an interface model for Ge and its surface passivating nitride. The Β-Ge3N4 (0001)/Ge (111) interface structure does not have dangling bonds and is predicted to be exceptionally stable compared with other possible structures. Band offsets determined using x-ray photoemission spectroscopy study are in agreement with the prediction by first-principles calculations. The band offsets are large enough to minimize possible carrier tunneling. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3040324
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1063/1.3040324
dc.description.sourcetitleApplied Physics Letters
dc.description.volume93
dc.description.issue22
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000261430600057
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