Full Name
(not current staff)
Yang M.
Ming, Y.
Yang, Ming
Yang, M.
Main Affiliation


Results 1-20 of 42 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
121-Jan-2011A synchrotron-based photoemission study of the MoO3Co interfaceWang, Y.-Z.; Yang, M. ; Qi, D.-C. ; Chen, S. ; Chen, W. ; Wee, A.T.S. ; Gao, X.-Y. 
22007Ab initio study on intrinsic defect properties of germanium nitride considered for gate dielectricYang, M. ; Wang, S.J.; Peng, G.W. ; Wu, R.Q. ; Feng, Y.P. 
3Jul-2010Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistorsWang, S.J.; Wong, T.I.; Chen, Q.; Yang, M. ; Wong, L.M.; Chai, J.W.; Zhang, Z.; Pan, J.S.; Feng, Y.P. 
416-Jan-2014Atomic N modified rutile TiO2(110) surface layer with significant visible light photoactivityTao, J.; Yang, M. ; Chai, J.W.; Pan, J.S.; Feng, Y.P. ; Wang, S.J.
515-May-2010Band alignments at SrZrO3/Ge(0 0 1) interface: Thermal annealing effectsYang, M. ; Deng, W.S.; Chen, Q.; Feng, Y.P. ; Wong, L.M.; Chai, J.W.; Pan, J.S.; Wang, S.J.; Ng, C.M.
62009Band offsets of HfO2 /ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculationChen, Q.; Yang, M. ; Feng, Y.P. ; Chai, J.W.; Zhang, Z.; Pan, J.S.; Wang, S.J.
731-Jan-2011Charge and spin transport in graphene-based heterostructureZeng, M. ; Shen, L. ; Yang, M. ; Zhang, C. ; Feng, Y. 
826-Mar-2019Discovery of Hidden Classes of Layered Electrides by Extensive High-Throughput Material ScreeningZhou, Jun ; Shen, Lei ; Yang, Ming ; Cheng, Haixia; Kong, Weilong ; Feng, Yuan Ping 
92008Effect of atomic hydrogen on boron-doped germanium: An ab initio studyWu, R.Q. ; Yang, M. ; Feng, Y.P. ; Ouyang, Y.F.
10Aug-2012Effect of interfacial strain on spin injection and spin polarization of Co 2CrAl/NaNbO 3/Co 2CrAl magnetic tunneling junctionCai, Y. ; Bai, Z.; Yang, M. ; Feng, Y.P. 
112009Effects of edge passivation by hydrogen on electronic structure of armchair graphene nanoribbon and band gap engineeringLu, Y.H. ; Wu, R.Q. ; Shen, L. ; Yang, M. ; Sha, Z.D.; Cai, Y.Q. ; He, P.M.; Feng, Y.P. 
1215-Jan-2011Effects of nitrogen incorporation on the electronic structure of rutile- TiO2Chai, J.W.; Yang, M. ; Chen, Q.; Pan, J.S.; Zhang, Z.; Feng, Y.P. ; Wang, S.J.
132015Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 NanodevicesLu Y. ; Xu W. ; Zeng M. ; Yao G. ; Shen L. ; Yang M. ; Luo Z. ; Pan F. ; Wu K. ; Das T. ; He P.; Jiang J.; Martin J. ; Feng Y.P. ; Lin H. ; Wang X.-S. 
142007Electronic structure of germanium nitride considered for gate dielectricsYang, M. ; Wang, S.J.; Feng, Y.P. ; Peng, G.W. ; Sun, Y.Y. 
152009Electronic structures of Β -Si3 N4 (0001) /Si (111) interfaces: Perfect bonding and dangling bond effectsYang, M. ; Wu, R.Q. ; Deng, W.S.; Shen, L. ; Sha, Z.D.; Cai, Y.Q. ; Feng, Y.P. ; Wang, S.J.
16Dec-2011Fabrication of a TiNx/Ni/Au contact on ZnO films with high thermal stability and low resistanceChai, J.W.; Yang, M. ; Chi, D.Z.; Ong, J.L.T.; Wang, S.J.; Zhang, Z.; Pan, J.S.; Feng, Y.P. ; Chua, S.J.
177-May-2012First principles study of Bismuth alloying effects in GaAs saturable absorberLi, D.; Yang, M. ; Zhao, S.; Cai, Y. ; Feng, Y. 
1812-Mar-2012First principles study of the ternary complex model of EL2 defect in GaAs saturable absorberLi, D.; Yang, M. ; Cai, Y. ; Zhao, S.; Feng, Y. 
192011First-principles study of NiSi2/HfO2 interfaces: Energetics and Schottky-barrier heightsWong, T.I.; Yang, M. ; Feng, Y.P. ; Chi, D.Z.; Wang, S.J.
20Oct-2012First-principles study of the effect of Bi Ga heteroantisites in GaAs:Bi alloyLi, D.; Yang, M. ; Zhao, S.; Cai, Y. ; Lu, Y. ; Bai, Z.; Feng, Y.