Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 Nanodevices

Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl504956s

Title:	Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 Nanodevices
Authors:	Lu Y. Xu W. Zeng M. Yao G. Shen L. Yang M. Luo Z. Pan F. Wu K. Das T. He P. Jiang J. Martin J. Feng Y.P. Lin H. Wang X.-S.
Issue Date:	2015
Publisher:	American Chemical Society
Citation:	Lu Y., Xu W., Zeng M., Yao G., Shen L., Yang M., Luo Z., Pan F., Wu K., Das T., He P., Jiang J., Martin J., Feng Y.P., Lin H., Wang X.-S. (2015). Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 Nanodevices. Nano Letters 15 (3) : 2061-2066. ScholarBank@NUS Repository. https://doi.org/10.1021/nl504956s
Source Title:	Nano Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/127673
ISSN:	15306984
DOI:	10.1021/nl504956s
Appears in Collections:	Staff Publications

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