Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl504956s
Title: Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 Nanodevices
Authors: Lu Y. 
Xu W. 
Zeng M. 
Yao G. 
Shen L. 
Yang M. 
Luo Z. 
Pan F. 
Wu K. 
Das T. 
He P.
Jiang J.
Martin J. 
Feng Y.P. 
Lin H. 
Wang X.-S. 
Issue Date: 2015
Publisher: American Chemical Society
Citation: Lu Y., Xu W., Zeng M., Yao G., Shen L., Yang M., Luo Z., Pan F., Wu K., Das T., He P., Jiang J., Martin J., Feng Y.P., Lin H., Wang X.-S. (2015). Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 Nanodevices. Nano Letters 15 (3) : 2061-2066. ScholarBank@NUS Repository. https://doi.org/10.1021/nl504956s
Source Title: Nano Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/127673
ISSN: 15306984
DOI: 10.1021/nl504956s
Appears in Collections:Staff Publications

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