Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl504956s
Title: Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 Nanodevices
Authors: Lu Y. 
Xu W. 
Zeng M. 
Yao G. 
Shen L. 
Yang M. 
Luo Z. 
Pan F. 
Wu K. 
Das T. 
He P.
Jiang J.
Martin J. 
Feng Y.P. 
Lin H. 
Wang X.-S. 
Issue Date: 2015
Publisher: American Chemical Society
Citation: Lu Y., Xu W., Zeng M., Yao G., Shen L., Yang M., Luo Z., Pan F., Wu K., Das T., He P., Jiang J., Martin J., Feng Y.P., Lin H., Wang X.-S. (2015). Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 Nanodevices. Nano Letters 15 (3) : 2061-2066. ScholarBank@NUS Repository. https://doi.org/10.1021/nl504956s
Source Title: Nano Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/127673
ISSN: 15306984
DOI: 10.1021/nl504956s
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

25
checked on Mar 23, 2019

WEB OF SCIENCETM
Citations

23
checked on Mar 13, 2019

Page view(s)

51
checked on Mar 22, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.