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https://doi.org/10.1002/pssa.200983756
Title: | Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistors | Authors: | Wang, S.J. Wong, T.I. Chen, Q. Yang, M. Wong, L.M. Chai, J.W. Zhang, Z. Pan, J.S. Feng, Y.P. |
Keywords: | Heterostructures Interface formation Modeling Thin-film transistors ZnO ZnO 2 |
Issue Date: | Jul-2010 | Citation: | Wang, S.J., Wong, T.I., Chen, Q., Yang, M., Wong, L.M., Chai, J.W., Zhang, Z., Pan, J.S., Feng, Y.P. (2010-07). Atomic and electronic structures at ZnO and ZrO 2 interface for transparent thin-film transistors. Physica Status Solidi (A) Applications and Materials Science 207 (7) : 1731-1734. ScholarBank@NUS Repository. https://doi.org/10.1002/pssa.200983756 | Abstract: | In this paper, we report the studies of atomic and electronic structures at ZnO and ZrO 2 interface. The epitaxial heterostructures were grown by laser molecular beam epitaxy and the interface atomic structure was determined by using highresolution transmission electron microscopy (TEM). Band alignment for high-k ZrO 2 layer on ZnO was investigated by in situ X-ray photoemission spectroscopy (XPS) characterization and first-principles calculations based on density functional theory (DFT). The valence and conduction band offsets (CBOs) were found to be 0.27±0.05 eV and 2.16±0.05 eV, respectively. The results are in good agreement with values from theoretical calculations. The large CBO and small lattice mismatch between ZnO and ZrO 2 suggest potential for ZrO 2 to be used as a gate dielectric in ZnO-based transparent electronic devices. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | Source Title: | Physica Status Solidi (A) Applications and Materials Science | URI: | http://scholarbank.nus.edu.sg/handle/10635/95831 | ISSN: | 18626300 | DOI: | 10.1002/pssa.200983756 |
Appears in Collections: | Staff Publications |
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