Please use this identifier to cite or link to this item:
|Title:||Effect of atomic hydrogen on boron-doped germanium: An ab initio study||Authors:||Wu, R.Q.
|Issue Date:||2008||Citation:||Wu, R.Q., Yang, M., Feng, Y.P., Ouyang, Y.F. (2008). Effect of atomic hydrogen on boron-doped germanium: An ab initio study. Applied Physics Letters 93 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2976669||Abstract:||Interaction between interstitial hydrogen (H) and boron (B) in germanium (Ge) is studied by at initio calculations to explore the effect of hydrogen on p -type Ge. The geometry, electronic structure, and frequency of local vibrational mode (LVM) of H in the stable B-H complex are determined. The interstitial hydrogen is found to reside between the B and Ge atoms and deactivate B dopant. The dissociation energy of the defect complex is calculated to be 1.06 eV, higher than that in Si. The frequency of LVM of isolated H at the Ge-Ge bond center and at the most stable bond minimum sites is also given and compared to experimental observations. © 2008 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96294||ISSN:||00036951||DOI:||10.1063/1.2976669|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 23, 2020
WEB OF SCIENCETM
checked on Oct 15, 2020
checked on Oct 11, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.