Please use this identifier to cite or link to this item:
|Title:||Effect of atomic hydrogen on boron-doped germanium: An ab initio study||Authors:||Wu, R.Q.
|Issue Date:||2008||Citation:||Wu, R.Q., Yang, M., Feng, Y.P., Ouyang, Y.F. (2008). Effect of atomic hydrogen on boron-doped germanium: An ab initio study. Applied Physics Letters 93 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2976669||Abstract:||Interaction between interstitial hydrogen (H) and boron (B) in germanium (Ge) is studied by at initio calculations to explore the effect of hydrogen on p -type Ge. The geometry, electronic structure, and frequency of local vibrational mode (LVM) of H in the stable B-H complex are determined. The interstitial hydrogen is found to reside between the B and Ge atoms and deactivate B dopant. The dissociation energy of the defect complex is calculated to be 1.06 eV, higher than that in Si. The frequency of LVM of isolated H at the Ge-Ge bond center and at the most stable bond minimum sites is also given and compared to experimental observations. © 2008 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96294||ISSN:||00036951||DOI:||10.1063/1.2976669|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.