Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2976669
DC FieldValue
dc.titleEffect of atomic hydrogen on boron-doped germanium: An ab initio study
dc.contributor.authorWu, R.Q.
dc.contributor.authorYang, M.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorOuyang, Y.F.
dc.date.accessioned2014-10-16T09:21:45Z
dc.date.available2014-10-16T09:21:45Z
dc.date.issued2008
dc.identifier.citationWu, R.Q., Yang, M., Feng, Y.P., Ouyang, Y.F. (2008). Effect of atomic hydrogen on boron-doped germanium: An ab initio study. Applied Physics Letters 93 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2976669
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96294
dc.description.abstractInteraction between interstitial hydrogen (H) and boron (B) in germanium (Ge) is studied by at initio calculations to explore the effect of hydrogen on p -type Ge. The geometry, electronic structure, and frequency of local vibrational mode (LVM) of H in the stable B-H complex are determined. The interstitial hydrogen is found to reside between the B and Ge atoms and deactivate B dopant. The dissociation energy of the defect complex is calculated to be 1.06 eV, higher than that in Si. The frequency of LVM of isolated H at the Ge-Ge bond center and at the most stable bond minimum sites is also given and compared to experimental observations. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2976669
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2976669
dc.description.sourcetitleApplied Physics Letters
dc.description.volume93
dc.description.issue8
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000259011900047
Appears in Collections:Staff Publications

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