Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2976669
Title: Effect of atomic hydrogen on boron-doped germanium: An ab initio study
Authors: Wu, R.Q. 
Yang, M. 
Feng, Y.P. 
Ouyang, Y.F.
Issue Date: 2008
Citation: Wu, R.Q., Yang, M., Feng, Y.P., Ouyang, Y.F. (2008). Effect of atomic hydrogen on boron-doped germanium: An ab initio study. Applied Physics Letters 93 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2976669
Abstract: Interaction between interstitial hydrogen (H) and boron (B) in germanium (Ge) is studied by at initio calculations to explore the effect of hydrogen on p -type Ge. The geometry, electronic structure, and frequency of local vibrational mode (LVM) of H in the stable B-H complex are determined. The interstitial hydrogen is found to reside between the B and Ge atoms and deactivate B dopant. The dissociation energy of the defect complex is calculated to be 1.06 eV, higher than that in Si. The frequency of LVM of isolated H at the Ge-Ge bond center and at the most stable bond minimum sites is also given and compared to experimental observations. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96294
ISSN: 00036951
DOI: 10.1063/1.2976669
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