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Title: First principles study on the interface of CrSbGaSb heterojunction
Authors: Wu, R.Q. 
Liu, L. 
Peng, G.W. 
Feng, Y.P. 
Issue Date: 1-May-2006
Citation: Wu, R.Q., Liu, L., Peng, G.W., Feng, Y.P. (2006-05-01). First principles study on the interface of CrSbGaSb heterojunction. Journal of Applied Physics 99 (9) : -. ScholarBank@NUS Repository.
Abstract: First principles calculations based on spin density functional theory are performed to study the energy alignment and magnetic properties of zinc-blende CrSbGaSb heterojunction. Our results suggest that at the interface CrSb remains half metallic. The Schottky barrier height of n -type GaSb is estimated to be 0.89 eV with the Fermi level lying below the conduction band minimum (CBM) of GaSb. The CBM of the minority spin lies just above that of GaSb, suggesting that the majority spin can be injected into GaSb without being flipped to the conduction bands of the minority spin. Thus the CrSbGaSb heterojunction can be potentially useful in the field of spintronics. © 2006 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.2189204
Appears in Collections:Staff Publications

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