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|Title:||Impact of oxide defects on band offset at GeO2 /Ge interface||Authors:||Yang, M.
|Issue Date:||2009||Citation:||Yang, M., Wu, R.Q., Chen, Q., Deng, W.S., Feng, Y.P., Chai, J.W., Pan, J.S., Wang, S.J. (2009). Impact of oxide defects on band offset at GeO2 /Ge interface. Applied Physics Letters 94 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3115824||Abstract:||High quality GeO2 dielectrics were prepared on Ge(001) surface by direct atomic source oxidation. The band alignments have been studied by using high resolution x-ray photoemission spectroscopy. The valence and conduction band offsets at GeO2 /Ge (001) interface are 4.59±0.03 and 0.54±0.03 eV, respectively. The calculated projected density of states indicate that the formation of germanium and oxygen vacancies at different oxidation stages might result in the reduction of valence band offsets, which clarified the varied experimental results of valence band offset [M. Perego, Appl. Phys. Lett. 90, 162115 (2007) and V. V. Afanas'ev and A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004)]. © 2009 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96874||ISSN:||00036951||DOI:||10.1063/1.3115824|
|Appears in Collections:||Staff Publications|
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