Please use this identifier to cite or link to this item:
|Title:||Cu-doped GaN: A dilute magnetic semiconductor from first-principles study||Authors:||Wu, R.Q.
|Issue Date:||2006||Citation:||Wu, R.Q., Peng, G.W., Liu, L., Feng, Y.P., Huang, Z.G., Wu, Q.Y. (2006). Cu-doped GaN: A dilute magnetic semiconductor from first-principles study. Applied Physics Letters 89 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2335773||Abstract:||First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of GaN doped with 6.25% of Cu. The Cu dopants are found spin polarized and the calculated band structures suggest a 100% polarization of the conduction carriers. The Cu-doped GaN favors ferromagnetic ground state which can be explained in terms of p-d hybridization mechanism, and a Curie temperature around 350 K can be expected. These results suggest that the Cu-doped GaN is a promising dilute magnetic semiconductor free of magnetic precipitates and may find applications in the field of spintronics. © 2006 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/96135||ISSN:||00036951||DOI:||10.1063/1.2335773|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 16, 2019
WEB OF SCIENCETM
checked on May 8, 2019
checked on May 13, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.