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Title: Cu-doped GaN: A dilute magnetic semiconductor from first-principles study
Authors: Wu, R.Q. 
Peng, G.W. 
Liu, L. 
Feng, Y.P. 
Huang, Z.G.
Wu, Q.Y.
Issue Date: 2006
Citation: Wu, R.Q., Peng, G.W., Liu, L., Feng, Y.P., Huang, Z.G., Wu, Q.Y. (2006). Cu-doped GaN: A dilute magnetic semiconductor from first-principles study. Applied Physics Letters 89 (6) : -. ScholarBank@NUS Repository.
Abstract: First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of GaN doped with 6.25% of Cu. The Cu dopants are found spin polarized and the calculated band structures suggest a 100% polarization of the conduction carriers. The Cu-doped GaN favors ferromagnetic ground state which can be explained in terms of p-d hybridization mechanism, and a Curie temperature around 350 K can be expected. These results suggest that the Cu-doped GaN is a promising dilute magnetic semiconductor free of magnetic precipitates and may find applications in the field of spintronics. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.2335773
Appears in Collections:Staff Publications

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