Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2335773
Title: Cu-doped GaN: A dilute magnetic semiconductor from first-principles study
Authors: Wu, R.Q. 
Peng, G.W. 
Liu, L. 
Feng, Y.P. 
Huang, Z.G.
Wu, Q.Y.
Issue Date: 2006
Citation: Wu, R.Q., Peng, G.W., Liu, L., Feng, Y.P., Huang, Z.G., Wu, Q.Y. (2006). Cu-doped GaN: A dilute magnetic semiconductor from first-principles study. Applied Physics Letters 89 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2335773
Abstract: First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of GaN doped with 6.25% of Cu. The Cu dopants are found spin polarized and the calculated band structures suggest a 100% polarization of the conduction carriers. The Cu-doped GaN favors ferromagnetic ground state which can be explained in terms of p-d hybridization mechanism, and a Curie temperature around 350 K can be expected. These results suggest that the Cu-doped GaN is a promising dilute magnetic semiconductor free of magnetic precipitates and may find applications in the field of spintronics. © 2006 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/96135
ISSN: 00036951
DOI: 10.1063/1.2335773
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

108
checked on Oct 17, 2018

WEB OF SCIENCETM
Citations

107
checked on Oct 9, 2018

Page view(s)

27
checked on Oct 5, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.