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|Title:||Cu-doped GaN: A dilute magnetic semiconductor from first-principles study|
|Authors:||Wu, R.Q. |
|Citation:||Wu, R.Q., Peng, G.W., Liu, L., Feng, Y.P., Huang, Z.G., Wu, Q.Y. (2006). Cu-doped GaN: A dilute magnetic semiconductor from first-principles study. Applied Physics Letters 89 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2335773|
|Abstract:||First-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of GaN doped with 6.25% of Cu. The Cu dopants are found spin polarized and the calculated band structures suggest a 100% polarization of the conduction carriers. The Cu-doped GaN favors ferromagnetic ground state which can be explained in terms of p-d hybridization mechanism, and a Curie temperature around 350 K can be expected. These results suggest that the Cu-doped GaN is a promising dilute magnetic semiconductor free of magnetic precipitates and may find applications in the field of spintronics. © 2006 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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