Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2335773
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dc.titleCu-doped GaN: A dilute magnetic semiconductor from first-principles study
dc.contributor.authorWu, R.Q.
dc.contributor.authorPeng, G.W.
dc.contributor.authorLiu, L.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorHuang, Z.G.
dc.contributor.authorWu, Q.Y.
dc.date.accessioned2014-10-16T09:19:53Z
dc.date.available2014-10-16T09:19:53Z
dc.date.issued2006
dc.identifier.citationWu, R.Q., Peng, G.W., Liu, L., Feng, Y.P., Huang, Z.G., Wu, Q.Y. (2006). Cu-doped GaN: A dilute magnetic semiconductor from first-principles study. Applied Physics Letters 89 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2335773
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96135
dc.description.abstractFirst-principles calculations based on spin density functional theory are performed to study the spin-resolved electronic properties of GaN doped with 6.25% of Cu. The Cu dopants are found spin polarized and the calculated band structures suggest a 100% polarization of the conduction carriers. The Cu-doped GaN favors ferromagnetic ground state which can be explained in terms of p-d hybridization mechanism, and a Curie temperature around 350 K can be expected. These results suggest that the Cu-doped GaN is a promising dilute magnetic semiconductor free of magnetic precipitates and may find applications in the field of spintronics. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2335773
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2335773
dc.description.sourcetitleApplied Physics Letters
dc.description.volume89
dc.description.issue6
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000239690800066
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