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|Title:||Enhanced boron activation in strained-Si/Si1-xGex substrate using laser annealing||Authors:||Ong, K.K.
|Issue Date:||2006||Citation:||Ong, K.K.,Pey, K.L.,Lee, P.S.,Wee, A.T.S.,Wang, X.C.,Wong, L.H. (2006). Enhanced boron activation in strained-Si/Si1-xGex substrate using laser annealing. ECS Transactions 1 (30) : 1-6. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2209374||Abstract:||Strained-Si/SiGe substrate comprises a thermally less conductive SiGe layer, which deprives a good thermal dissipation pathway. This gives rise to a highly non-equilibrium laser process and can vary significantly to that in normal bulk silicon substrate. Our results show that the boron distribution in strained-Si/SiGe substrate is always deeper and more abrupt than that in bulk silicon substrate, signifying a substantial thermal confinement that leads to a greater melt extent and melting duration. It is found that a decrease of over 94% thermal transfer rate occurs in the strained-Si/SiGe substrate. Non-melt laser annealing, on the other hand, produces dopant profiles of negligible diffusion and improves activation in the strained-Si/SiGe substrates. No degradation in the strain in the strained-Si layer was induced after non-melt laser annealing. The study demonstrates that non-melt laser annealing in thermally less conductive semiconductor substrates is capable of enhancing dopant activation at low laser fluence. copyright The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/98698||ISSN:||19385862||DOI:||10.1149/1.2209374|
|Appears in Collections:||Staff Publications|
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