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Fen Lin

rp02031

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Full Name
Fen Lin
Variants
Lin, Fen
Lin, F.
 
Main Affiliation
 
Faculty
 
Email
serlf@nus.edu.sg
 

Publications

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Date Issued:  [2010 TO 2019]

Results 1-17 of 17 (Search time: 0.011 seconds).

Issue DateTitleAuthor(s)
11-Oct-2017A modeling framework for optimizing current density in four-terminal tandem solar cells: A case study on GaAs/Si tandemLIU ZHE ; REN ZEKUN ; LIU HAOHUI ; NASIM SAHRAEI KHANGHAH ; LIN FEN ; ROLF ARNOLD STANGL ; ABERLE,ARMIN GERHARD ; Buonassisi, T; IAN MARIUS PETERS 
22015Accurate extraction of the series resistance of aluminum local back surface field silicon wafer solar cellsChen, Jia; Du, Zheren ; Ma, Fajun ; Lin, Fen ; Sarangi, Debajyoti ; Hoex, Bram ; Aberle, Armin Gerhard 
32012Aluminum local back surface field solar cells with inkjet-opened rear dielectric filmsLiu, L.; Du, Z.; Lin, F. ; Hoex, B. ; Aberle, A.G. 
41-Jul-2018Developing a Robust Recombination Contact to Realize Monolithic Perovskite Tandems With Industrially Common p-Type Silicon Solar CellsHoye, Robert LZ; Bush, Kevin A; Oviedo, Felipe; Sofia, Sarah E; MAUNG THWAY ; LI XINHANG ; LIU ZHE ; Jean, Joel; Mailoa, Jonathan P; Osherov, Anna; LIN FEN ; Palmstrom, Axel F; Bulovic, Vladimir; McGehee, Michael D; IAN MARIUS PETERS ; Buonassisi, Tonio
5Jun-2013Excellent boron emitter passivation for high-efficiency Si wafer solar cells using AlOx/SiNx dielectric stacks deposited in an industrial inline plasma reactorDuttagupta, S.; Lin, F. ; Shetty, K.D.; Aberle, A.G. ; Hoex, B. 
625-Sep-2013Excellent c-Si surface passivation by thermal atomic layer deposited aluminum oxide after industrial firing activationLiao, B.; Stangl, R.; Ma, F. ; Mueller, T.; Lin, F. ; Aberle, A.G. ; Bhatia, C.S. ; Hoex, B. 
7Oct-2012Excellent passivation of p + silicon surfaces by inline plasma enhanced chemical vapor deposited SiO x/AlO x stacksLin, F. ; Duttagupta, S.; Shetty, K.D.; Boreland, M.; Aberle, A.G. ; Hoex, B. 
82011High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVDDutta Gupta, S.; Hoex, B. ; Lin, F. ; Mueller, T.; Aberle, A.G. 
92019Highly Efficient Semitransparent Perovskite Solar Cells for Four Terminal Perovskite-Silicon TandemsDewi, HA; Wang, H; Li, J; Thway, M ; Sridharan, R ; Stangl, R ; Lin, F ; Aberle, AG ; Mathews, N; Bruno, A; Mhaisalkar, S
101-Aug-2017Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiNXLin, Fen ; Toh, Mei Gi ; Thway, Maung ; Li, Xinhang ; Nandakumar, Naomi ; Gay, Xavier; Dielissen, Bas; Raj, Samuel ; Aberle, Armin G 
112013Investigation of screen-printed rear contacts for aluminum local back surface field silicon wafer solar cellsChen, J.; Tey, Z.H.J.; Du, Z.R.; Lin, F. ; Hoex, B. ; Aberle, A.G. 
122012Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide filmsLin, F. ; Hoex, B. ; Koh, Y.H.; Lin, J.J. ; Aberle, A.G. 
132013Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide filmsLin, F. ; Hoex, B. ; Koh, Y.H.; Lin, J. ; Aberle, A.G. 
142012State-of-the-art surface passivation of boron emitters using inline PECVD AlOx/SiNx stacks for industrial high-efficiency silicon wafer solar cellsDuttagupta, S.; Lin, F. ; Shetty, K.D.; Wilson, M.; Ma, F.-J. ; Lin, J. ; Aberle, A.G. ; Hoex, B. 
1514-Jan-2013The effect of light soaking on crystalline silicon surface passivation by atomic layer deposited Al2O3Liao, B.; Stangl, R.; Mueller, T.; Lin, F. ; Bhatia, C.S. ; Hoex, B. 
161-Nov-2018Ultra-Thin GaAs Double-Junction Solar Cell With Carbon-Doped EmitterRen, Zekun ; Thway, Maung ; Liu, Zhe ; Wang, Yue ; Ke, Cangming ; Yaung, Kevin N; Wang, Bing; Tan, Chuan Seng ; Lin, Fen ; Aberle, Armin G ; Buonassisi, Tonio; Peters, Ian Marius 
172013Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acidLiu, L.; Lin, F. ; Heinrich, M.; Aberle, A.G. ; Hoex, B.