Please use this identifier to cite or link to this item: https://doi.org/10.7567/JJAP.56.08MB01
Title: Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiNX
Authors: Lin, Fen 
Toh, Mei Gi 
Thway, Maung 
Li, Xinhang 
Nandakumar, Naomi 
Gay, Xavier
Dielissen, Bas
Raj, Samuel 
Aberle, Armin G 
Keywords: Science & Technology
Physical Sciences
Physics, Applied
Physics
SOLAR-CELLS
CRYSTALLINE SILICON
INDUCED DEGRADATION
TEMPERATURE
NITRIDE
Issue Date: 1-Aug-2017
Publisher: IOP PUBLISHING LTD
Citation: Lin, Fen, Toh, Mei Gi, Thway, Maung, Li, Xinhang, Nandakumar, Naomi, Gay, Xavier, Dielissen, Bas, Raj, Samuel, Aberle, Armin G (2017-08-01). Impacts of light illumination on monocrystalline silicon surfaces passivated by atomic layer deposited Al2O3 capped with plasma-enhanced chemical vapor deposited SiNX. JAPANESE JOURNAL OF APPLIED PHYSICS 56 (8). ScholarBank@NUS Repository. https://doi.org/10.7567/JJAP.56.08MB01
Abstract: © 2017 The Japan Society of Applied Physics. In this work, we investigate the impact of light illumination on crystalline silicon surfaces passivated with inline atomic layer deposited aluminum oxide capped with plasma-enhanced chemical vapor deposited silicon nitride. It is found that, for dedicated n-type lifetime samples under illumination, there is no light induced degradation (LID) but enhanced passivation. The lifetime increase happened with a much faster speed compared to the lifetime decay during dark storage, resulting in the overall lifetime enhancement for actual field application scenarios (sunshine during the day and darkness during the night). In addition, it was found that the lifetime enhancement is spectrally dependent and mainly associated with the visible part of the solar spectrum. Hence, it has negligible impact for such interfaces applied on the rear of the solar cells, for example p-type aluminum local back surface field (Al-LBSF) cells.
Source Title: JAPANESE JOURNAL OF APPLIED PHYSICS
URI: https://scholarbank.nus.edu.sg/handle/10635/155046
ISSN: 0021-4922
1347-4065
DOI: 10.7567/JJAP.56.08MB01
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