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|Title:||Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films||Authors:||Lin, F.
|Keywords:||Atomic layer deposition
|Issue Date:||2012||Citation:||Lin, F., Hoex, B., Koh, Y.H., Lin, J.J., Aberle, A.G. (2012). Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films. Energy Procedia 15 : 84-90. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2012.02.010||Abstract:||Hafnium oxide (HfO 2) films synthesized by thermal atomic layer deposition (ALD) are investigated for low-temperature surface passivation of moderately doped crystalline silicon (c-Si). At intermediate bulk injection levels, effective surface recombination velocities of 55 cm/s and 24 cm/s are achieved on 2.1 Ωcm p-type and 3.3 Ωcm n-type c-Si, respectively, demonstrating a good level of surface passivation. Fourier transform infrared spectroscopy and cross-sectional transmission electron microscopy experiments are conducted to provide insight into the surface passivation mechanism of HfO 2 on c-Si. The good passivation quality is shown to be due to both chemical passivation and field-effect passivation. The latter is due to built-in positive charges in the HfO 2 film, which is particularly beneficial for the passivation of n-type c-Si. © 2011 Published by Elsevier Ltd.||Source Title:||Energy Procedia||URI:||http://scholarbank.nus.edu.sg/handle/10635/113261||ISSN:||18766102||DOI:||10.1016/j.egypro.2012.02.010|
|Appears in Collections:||Staff Publications|
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