Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.egypro.2012.02.010
Title: Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films
Authors: Lin, F. 
Hoex, B. 
Koh, Y.H.
Lin, J.J. 
Aberle, A.G. 
Keywords: Atomic layer deposition
Hafnium oxide
Surface passivation
Issue Date: 2012
Citation: Lin, F., Hoex, B., Koh, Y.H., Lin, J.J., Aberle, A.G. (2012). Low-temperature surface passivation of moderately doped crystalline silicon by atomic-layer-deposited hafnium oxide films. Energy Procedia 15 : 84-90. ScholarBank@NUS Repository. https://doi.org/10.1016/j.egypro.2012.02.010
Abstract: Hafnium oxide (HfO 2) films synthesized by thermal atomic layer deposition (ALD) are investigated for low-temperature surface passivation of moderately doped crystalline silicon (c-Si). At intermediate bulk injection levels, effective surface recombination velocities of 55 cm/s and 24 cm/s are achieved on 2.1 Ωcm p-type and 3.3 Ωcm n-type c-Si, respectively, demonstrating a good level of surface passivation. Fourier transform infrared spectroscopy and cross-sectional transmission electron microscopy experiments are conducted to provide insight into the surface passivation mechanism of HfO 2 on c-Si. The good passivation quality is shown to be due to both chemical passivation and field-effect passivation. The latter is due to built-in positive charges in the HfO 2 film, which is particularly beneficial for the passivation of n-type c-Si. © 2011 Published by Elsevier Ltd.
Source Title: Energy Procedia
URI: http://scholarbank.nus.edu.sg/handle/10635/113261
ISSN: 18766102
DOI: 10.1016/j.egypro.2012.02.010
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

13
checked on Oct 20, 2019

WEB OF SCIENCETM
Citations

14
checked on Jul 9, 2019

Page view(s)

63
checked on Oct 11, 2019

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.