Please use this identifier to cite or link to this item: https://doi.org/10.1109/JPHOTOV.2018.2820509
Title: Developing a Robust Recombination Contact to Realize Monolithic Perovskite Tandems With Industrially Common p-Type Silicon Solar Cells
Authors: Hoye, Robert LZ
Bush, Kevin A
Oviedo, Felipe
Sofia, Sarah E
MAUNG THWAY 
LI XINHANG 
LIU ZHE 
Jean, Joel
Mailoa, Jonathan P
Osherov, Anna
LIN FEN 
Palmstrom, Axel F
Bulovic, Vladimir
McGehee, Michael D
IAN MARIUS PETERS 
Buonassisi, Tonio
Keywords: Science & Technology
Technology
Physical Sciences
Energy & Fuels
Materials Science, Multidisciplinary
Physics, Applied
Materials Science
Physics
Aluminum back-surface field (Al-BSF)
nickel oxide
perovskite-silicon tandem solar cells
p-type silicon cell
recombination contact
stability
EFFICIENT
PHOTOVOLTAICS
MANAGEMENT
FILMS
Issue Date: 1-Jul-2018
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: Hoye, Robert LZ, Bush, Kevin A, Oviedo, Felipe, Sofia, Sarah E, MAUNG THWAY, LI XINHANG, LIU ZHE, Jean, Joel, Mailoa, Jonathan P, Osherov, Anna, LIN FEN, Palmstrom, Axel F, Bulovic, Vladimir, McGehee, Michael D, IAN MARIUS PETERS, Buonassisi, Tonio (2018-07-01). Developing a Robust Recombination Contact to Realize Monolithic Perovskite Tandems With Industrially Common p-Type Silicon Solar Cells. IEEE JOURNAL OF PHOTOVOLTAICS 8 (4) : 1023-1028. ScholarBank@NUS Repository. https://doi.org/10.1109/JPHOTOV.2018.2820509
Abstract: © 2011-2012 IEEE. Although two-terminal perovskite-silicon tandem solar cells have rapidly increased in efficiency, they have only been demonstrated with n-type silicon, which currently constitutes less than 5% of the global photovoltaics market. In this paper, we realize the first two-terminal perovskite tandem with p-type silicon by developing a recombination contact that enables voltage addition without damaging either subcell. We find that silicon interband recombination contacts are limited by a SiOx charge-extraction barrier, which forms during oxidative top-cell fabrication. A sputtered 30-nm indium tin oxide layer is found to protect the silicon cell surface from oxidation, while forming a recombination contact with the p-type nickel oxide hole transport layer for the perovskite top cell. Using this recombination contact we achieve voltage addition between the perovskite top cell and aluminum back-surface field p-type silicon bottom cell. We also find that minimizing moisture on the nickel oxide surface is important for achieving a stable open-circuit voltage under illumination. The recombination contact developed herein could play an important role in near-future developments.
Source Title: IEEE JOURNAL OF PHOTOVOLTAICS
URI: https://scholarbank.nus.edu.sg/handle/10635/176861
ISSN: 2156-3381
2156-3403
DOI: 10.1109/JPHOTOV.2018.2820509
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