Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.solmat.2017.05.048
Title: A modeling framework for optimizing current density in four-terminal tandem solar cells: A case study on GaAs/Si tandem
Authors: LIU ZHE 
REN ZEKUN 
LIU HAOHUI 
NASIM SAHRAEI KHANGHAH 
LIN FEN 
ROLF ARNOLD STANGL 
ABERLE,ARMIN GERHARD 
Buonassisi, T
IAN MARIUS PETERS 
Issue Date: 1-Oct-2017
Publisher: Elsevier BV
Citation: LIU ZHE, REN ZEKUN, LIU HAOHUI, NASIM SAHRAEI KHANGHAH, LIN FEN, ROLF ARNOLD STANGL, ABERLE,ARMIN GERHARD, Buonassisi, T, IAN MARIUS PETERS (2017-10-01). A modeling framework for optimizing current density in four-terminal tandem solar cells: A case study on GaAs/Si tandem. Solar Energy Materials and Solar Cells 170 : 167-177. ScholarBank@NUS Repository. https://doi.org/10.1016/j.solmat.2017.05.048
Abstract: © 2017 Elsevier B.V. We present a modeling framework to quantify current density losses and determine optimization steps for four-terminal tandem solar cells, which consist of a high-bandgap thin-film top cell and an industrial-type Si wafer bottom cell. We demonstrate the framework on the example of a 21.3% efficient stacked four-terminal GaAs/Si tandem solar cell. In a first step, we develop an optical model for stacked tandem configuration and carry out the current loss analysis for this tandem device. Photon absorption in the tandem is broken down into different channels. All parasitic absorptions that do not contribute to current generation are considered part of a loss channel. In a second step, we quantify the potential current gains from single-parameter optimizations, the redistribution of photon losses into other channels, and the synergistic gains that can be achieved by co-optimization. Finally, using the simulation model, we are able to determine the best sequence of optimizing the short-circuit current density in the GaAs/Si tandem solar cell to possibly achieve 37.8 mA/cm2 with experimentally feasible parameters.
Source Title: Solar Energy Materials and Solar Cells
URI: https://scholarbank.nus.edu.sg/handle/10635/176860
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2017.05.048
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