Please use this identifier to cite or link to this item:
|Title:||Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acid||Authors:||Liu, L.
|Issue Date:||2013||Citation:||Liu, L., Lin, F., Heinrich, M., Aberle, A.G., Hoex, B. (2013). Unexpectedly high etching rate of highly doped n-type crystalline silicon in hydrofluoric acid. ECS Journal of Solid State Science and Technology 2 (9) : P380-P383. ScholarBank@NUS Repository. https://doi.org/10.1149/2.026309jss||Abstract:||The high selectivity in etching of dielectric films over crystalline silicon (c-Si) by hydrofluoric acid (HF) is routinely exploited in the fabrication of various silicon based devices such as microelectromechanical systems (MEMS) and silicon solar cells. In this paper it is shown that the high selectivity does not apply to highly doped n-type c-Si. We confirm experimentally that the etch rate of highly doped n-type c-Si is about 0.8 nm/minute in diluted HF, which is more than 10 times higher than previous results reported in the literature and measured at lower carrier concentrations. We propose that a combination of factors is contributing to the observed fast etching rate of heavily doped n-type c-Si. The proper understanding and exploitation of the etching mechanism of n+ c-Si by HF can be very beneficial for the fabrication of silicon MEMS and solar cell devices. © 2013 The Electrochemical Society.||Source Title:||ECS Journal of Solid State Science and Technology||URI:||http://scholarbank.nus.edu.sg/handle/10635/83250||ISSN:||21628769||DOI:||10.1149/2.026309jss|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 4, 2021
WEB OF SCIENCETM
checked on Feb 25, 2021
checked on Mar 1, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.